Preparation method of crystalline silicon solar battery multi-layer antireflection film

An anti-reflection film, solar cell technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of high cost, poor anti-PID performance, reduced production cost, etc., to reduce production costs, good anti-PID performance, comprehensive good performance

Inactive Publication Date: 2015-05-27
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, double-layer SiNx as an anti-reflection film also has its unavoidable defects, such as poor anti-PID performance and high cost, so many scholars are studying how to obtain cheap and comprehensive anti-reflection films.
With the development and progress of technolog

Method used

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  • Preparation method of crystalline silicon solar battery multi-layer antireflection film

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Embodiment 1

[0013] Embodiment 1: as attached figure 1 As shown, a method for preparing a multilayer anti-reflection film for a crystalline silicon solar cell, a P-type polysilicon wafer 1 of 156*156 cm is placed in a coating machine after completing the processes of acid texturing, phosphorus diffusion, and etching and cleaning. When making the anti-reflection film layer, first make a layer of SiO on the surface of the solar cell silicon wafer 1 2 Coating I2, then SiO 2 Make a layer of SiO on the surface of the film layer Ⅰ2 2 Layer II3, finally on SiO 2 The SiNx anti-reflection coating layer 4 is fabricated on the surface of the coating layer II3, and the specific steps are as follows:

[0014] (1) Pre-cleaning: use N 2 as diluent gas, N 2 The flow range is 3slm, the graphite boat enters the PECVD equipment, and then utilizes NH 3 For pre-cleaning, NH 3 The flow rate is 5slm, the pre-cleaning time is 1200s, the pressure in the tube is 2000mtorr, the RF power is 5500W, and the duty...

Embodiment 2

[0018] Embodiment 2: Another method for preparing a multilayer anti-reflection film for a crystalline silicon solar cell, the specific steps are as follows:

[0019] (1) Pre-cleaning: use N 2 as diluent gas, N 2 The flow range is 5slm, the graphite boat enters the PECVD equipment, and then utilizes NH 3 For pre-cleaning, NH 3 The flow rate is 5slm, the pre-cleaning time is 150s, the pressure inside the tube is 1800mtorr, the RF power is 5000W, and the duty cycle is 1 / 5ms;

[0020] (2) Making the first layer of SiO 2 Film layer Ⅰ: the first layer of SiO is plated after pre-cleaning 2 Membrane Ⅰ2, through the oxidizing gas N 2 Oxidation reaction in 0 to PECVD furnace to generate SiO 2 Coating I2, the N 2 0 flow rate is 7000, the SiO 2 The thickness of film layer I2 is 10nm;

[0021] (3) Making the second layer of SiO 2 Film layer Ⅱ: in the first layer of SiO 2 The second layer of SiO is plated on the film layer Ⅰ2 2 Membrane II (3), through the oxidizing gas N 2 Oxi...

Embodiment 3

[0023] Embodiment 3: Another kind of preparation method of multilayer anti-reflection film of crystalline silicon solar cell, concrete steps are as follows:

[0024] (1) Pre-cleaning: use N 2 as diluent gas, N 2 The flow range is 1slm, the graphite boat enters the PECVD equipment, and then utilizes NH 3 For pre-cleaning, NH 3 The flow rate is 8slm, the pre-cleaning time is 100s, the pressure in the tube is 2500mtorr, the RF power is 6000W, and the duty cycle is 1 / 8ms;

[0025] (2) Making the first layer of SiO 2 Film layer Ⅰ: the first layer of SiO is plated after pre-cleaning 2 Membrane Ⅰ2, through the oxidizing gas N 2 Oxidation reaction in 0 to PECVD furnace to generate SiO2 Coating I2, the N 2 0 flow rate is 7500, the SiO 2 The thickness of film layer Ⅰ2 is 8nm;

[0026] (3) Making the second layer of SiO 2 Film layer Ⅱ: in the first layer of SiO 2 The second layer of SiO is plated on the film layer Ⅰ2 2 Membrane II (3), through the oxidizing gas N 2 Oxidation ...

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Abstract

The invention discloses a preparation method of a crystalline silicon solar battery multi-layer antireflection film. When an antireflection film is prepared in a film plating process, firstly, a SiO2 film layer I is prepared on the surface of a solar battery silicon wafer, secondly, a SiO2 film layer II is prepared on the surface of the SiO2 film layer I, and finally, a SiNx antireflection film is prepared on the surface of the SiO2 film layer II. The preparation method comprises the following specific steps: (1), precleaning; (2), preparing the first SiO2 film layer I; (3), preparing the second SiO2 film layer II: plating the second SiO2 film II on the first SiO2 film layer I, inflating oxidizing gas into a PECVD furnace, and performing oxidation reaction to generate the SiO2 film layer II with the thickness of 45-55nm; (4), preparing the SiNxantireflection film. The crystalline silicon solar battery multi-layer antireflection film is high in anti-PID performance and higher in comprehensive performance; the efficiency of the film plating process is improved; the production cost is reduced.

Description

technical field [0001] The invention relates to a method for preparing a crystalline silicon solar cell, in particular to a method for preparing a multilayer anti-reflection film for a crystalline silicon solar cell. Background technique [0002] With the increasing consumption of traditional energy and the serious environmental problems caused by it, the solar photovoltaic industry has developed rapidly due to its non-polluting and inexhaustible characteristics. Solar cells are the core technology and the most cost-consuming part of the photovoltaic industry, so research on solar cells is the most important topic in the photovoltaic industry. Solar cells mainly include cleaning and texturing, diffusion, etching, PECVD, screen printing, and sintering. The purpose of PECVD is to prepare an anti-reflection film on its surface to reduce the reflectivity of sunlight. At present, the double-layer SiNx coating is mainly used as the anti-reflection coating in the PECVD process, be...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02168Y02E10/50Y02P70/50
Inventor 叶飞蒋方丹金浩陈康平
Owner ZHEJIANG JINKO SOLAR CO LTD
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