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Substrate processing method for supporting a catalyst particle for plating process

一种基板处理方法、催化剂的技术,应用在液态化学镀覆、涂层、印刷电路制造等方向,能够解决阶梯覆盖差、TSV应用障碍、薄膜制造成本昂贵等问题,达到密合性良好的效果

Active Publication Date: 2015-06-03
TANAKA PRECIOUS METAL IND +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, with regard to the metal thin film formation process described above, the physical vapor deposition method requires a large-scale vacuum device, and also has the problem of poor step coverage.
The problem of ladder coverage is particularly an obstacle to the application of TSV
On the other hand, in terms of the chemical vapor deposition method, the metal compound as a raw material is expensive, and in addition, the process itself is costly and requires high temperature, so there is a concern that the thin film manufacturing cost is expensive
In addition, compared with the physical vapor deposition method, the step coverage of the chemical vapor deposition method is good, but it is difficult to form a uniform film over the bottom of the via hole with a high aspect ratio in many cases.

Method used

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  • Substrate processing method for supporting a catalyst particle for plating process
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  • Substrate processing method for supporting a catalyst particle for plating process

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Experimental program
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Effect test

no. 1 Embodiment approach

[0043] first embodiment : In this embodiment, Pd particles and a metal colloid solution are produced, a substrate on which TSVs have been formed is dipped and treated, and a plated layer is formed by electroless plating.

[0044] [Manufacture of Pd particles]

[0045] 1500 mL of pure water was placed in a separable flask having a capacity of 5 L, and 5.87 g of Pd chloride powder (Pd content: 32.89 mmol) was charged thereinto. At this time, Pd chloride was insoluble in water, and the solution was in a cloudy state. A sodium chloride solution in which 9.61 g of sodium chloride (5 times the molar equivalent of Pd) was dissolved in 1000 mL of pure water was added thereto, and stirred. During this process, the solution became brown while increasing its transparency, and became an orange transparent aqueous solution after stirring for 50 minutes.

[0046] A PVP aqueous solution (a solution in which 10.5 g of PVP was dissolved in 1000 mL of pure water) was added to this Pd chlori...

no. 2 Embodiment approach

[0059] 2nd embodiment : Here, the same substrate as in the first embodiment was treated using the Pd colloid solution produced in the first embodiment, and the bonding state of the Pd particles was confirmed in more detail. Also, a Co-W-B film as a metal film was formed by electroless plating.

[0060] The substrate used was a Si substrate formed with via holes (hole diameter: 2.5 μm, depth: 63 μm: aspect ratio: 25). On this substrate, SiO 2 layer and SAM. This substrate was immersed in a Pd colloid solution. The processing temperature at this time was 25 degreeC, and the immersion time was 10 minutes.

[0061] After the Pd particles were carried by the dipping treatment, the adsorption density (bonding number) of the Pd particles on the surface of the substrate and the inner surface of the via hole was calculated from the SEM photograph. show the result in Figure 4 . Depend on Figure 4 It was confirmed that the Pd colloidal solution of the first embodiment carried ...

no. 3 Embodiment approach

[0064] third embodiment: Here, Pd particles having different particle diameters and interplanar spacings of Pd(111) planes were produced. 2000 mL of pure water was placed in a separable flask, and 5.87 g of Pd chloride powder (Pd content: 32.89 mmol) was put thereinto. Then, stirring was performed while adding the same sodium chloride solution as in the first embodiment. A PVP aqueous solution (a solution in which 8.75 g of PVP was dissolved in 1500 mL of pure water) was added to this Pd chloride aqueous solution, and 875 mL of methanol was added. Thereafter, as in the first embodiment, the reaction solution is heated, stirred, and refluxed, concentrated, ultrafiltered, and filtered to recover Pd particles. The average particle size of the Pd particles obtained in this process is 4nm, and the interplanar distance of the Pd(111) plane is

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Abstract

The present invention provides a substrate processing method for supporting a metal micro-particle for formation of a plating layer on a circuit pattern or TSV for various substrates, and that enables finer processing than conventional methods and enables stable plating layer formation. The present invention is a substrate processing method that, in order to support a metal particle that acts as a catalyst for formation of a plating layer on a substrate, causes contact between the substrate and a colloid solution containing the metal particle, wherein the substrate processing method is characterized by the colloid solution containing a metal particle that comprises Pd and that has a particle size of 0.6-4.0 nm and for which the plane-to-plane distance for the (111) plane is at least 2.254 Å. With respect to the substrate surface prior to this processing, by forming an organic layer such as SAM, the bonding strength of the Pd particle can be increased.

Description

technical field [0001] The present invention relates to a processing method for forming a metal layer such as a barrier layer or an electrode layer on a substrate such as an LSI substrate by plating. Specifically, it relates to a processing method in which metal particles functioning as a catalyst for forming a plated layer on a substrate are supported on the substrate. Background technique [0002] In the manufacturing process of printed circuit boards, LSI substrates, etc. that are mounted on various electronic devices, conductive metal layers constituting wiring, electrodes, etc. are formed. These conductive metal layers have conventionally been used in combination of metal thin film formation processes such as physical vapor deposition such as vapor deposition and sputtering or chemical vapor deposition such as CVD and patterning processes such as photolithography or etching. [0003] In addition, with the increase in density of electronic devices in recent years, appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/18
CPCC23C18/1893C23C18/208C23C18/2086C23C18/30C23C18/34H05K3/387H05K3/389H05K3/422H05K3/426
Inventor 中村纪章谷内淳一久保仁志大岛优辅石川智子新宫原正三井上史大
Owner TANAKA PRECIOUS METAL IND