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Thin film resistance material, thin film resistance and preparation method thereof

A technology of thin film resistors and conductive supports, applied in the direction of resistance manufacturing, resistors, non-adjustable metal resistors, etc., can solve the problem of low square resistance, achieve high square resistance value, low temperature coefficient of resistance, high temperature stability Effect

Active Publication Date: 2017-08-01
SHENNAN CIRCUITS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the thin film resistor made by it has a low temperature coefficient of resistance, its square resistance is also very low. The square resistance value of a thin film resistor with a resistance material thickness of 100nm is 100, and the resistance material thickness of a thin film resistor with a thickness of 200nm is 100. 50

Method used

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  • Thin film resistance material, thin film resistance and preparation method thereof
  • Thin film resistance material, thin film resistance and preparation method thereof

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preparation example Construction

[0036] The present invention also provides a method for preparing a thin-film resistor, comprising: depositing the thin-film resistor material described in the above technical solution on a support by physical vapor deposition to obtain a thin-film resistor.

[0037]In the present invention, thin-film resistor materials are deposited on a support to prepare thin-film resistors by physical vapor deposition; said physical vapor deposition includes but not limited to vacuum evaporation, magnetron sputtering, arc plasma plating, ion plating and molecular Beam epitaxy is preferably one of vacuum evaporation, magnetron sputtering, and ion plating; more preferably one of vacuum evaporation and magnetron sputtering. The support body is a conductive support body or an insulating support body. The present invention is not limited to the conductive support body. A conductive support body well-known to those skilled in the art can be used, preferably copper foil; the insulating support bod...

Embodiment 1～11

[0044] Add 0.5%, 1%, 2%, 3%, 5%, 8%, 10%, 15%, 20%, and 54% of the mass percentage of the target to the mixture of Ni and Cr with a mass ratio of 4:1 , 84% Cu to prepare the target material, vacuumize to 1.5×10 after starting up -6 After mbar, adjust the argon flow to make the vacuum in the chamber 1.7×10 -2 mbar, constant current sputtering, current 20A, voltage 300-400V, sputtering time 5min, annealing under nitrogen condition at 300°C after sputtering to prepare thin film resistors. The resistance temperature variation coefficients of the prepared thin film resistors were measured respectively, and the results are as follows: figure 1 as shown, figure 1 The resistance temperature variation coefficient figure of the thin film resistance that is prepared for embodiment 1~11 of the present invention and comparative example 1; figure 1 It can be seen that, compared with the thin-film resistor without adding copper, the addition of copper has a certain effect on reducing the ...

Embodiment 12

[0048] Under the condition of 150°C, the thin-film resistors composed of Ni, Cr, and Cu with a mass ratio of 78:20:2 were placed for 100-5000 hours, and the change rate of the resistance value was measured. The results are as follows: figure 2 as shown, figure 2 The stability curves of the thin-film resistors provided by Example 12 of the present invention and Comparative Example 2, wherein curve b is the stability curves of the thin-film resistors provided by Example 12 of the present invention; as can be seen from curve b, the embodiment of the present invention 12 provides high stability of thin film resistors.

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Abstract

The invention provides a thin film resistance material comprising: 50-99.5wt% Ni; 0.5-40wt% Cu; 0-40wt% M, wherein M is selected from Al, Zn, Ti, V, Mn, Fe, One or more of Ta, Mo, Ru, Cr, Si, Pt, C. The invention also provides a thin film resistor and a preparation method thereof. The thin film resistance material provided by the invention includes Cu with high temperature stability, which reduces the resistance temperature variation coefficient of the thin film resistance and makes the resistance value of the thin film resistance change with temperature smaller. The thin film resistance material contains Ni, and its alloy with Cu and Cr has high temperature stability and low temperature coefficient of resistance, and at the same time has a high square resistance value under the same film thickness.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a thin film resistance material, a thin film resistance and a preparation method thereof. Background technique [0002] With the rapid development of wireless communication, automotive electronics and various consumer electronics products, higher requirements are put forward for the high performance and integrated miniaturization of products. Among them, the planar embeddable resistor component is an important part of the embedding technology, and a lot of research has been carried out at home and abroad. [0003] Planar embeddable resistor components can be divided into thick film products with a thickness greater than 10 μm and thin film products with a thickness less than 2 μm according to the thickness of the film layer. Thick film products can be divided into low temperature co-fired type (LTCC) and organic thick film type (PTF). The low temperature co-fired type...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C19/03C22C19/05H01C7/00H01C17/075
Inventor 付治屯刘德波彭勤卫
Owner SHENNAN CIRCUITS
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