Pressure sensor

A pressure sensor and sensor technology, applied in the sensor field, can solve the problems of high cost, low reliability, complex structure of piezoresistive pressure sensor, etc., and achieve the effects of high yield, reliable operation and simple structure

Inactive Publication Date: 2015-06-24
苏州森特克测控技术有限公司
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Therefore, the present invention aims to solve the problems of existing piezoresistive pressure sensors with complex struc

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pressure sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0037] This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims. In the drawings, the size and relative sizes of elements or components may be exaggerated for clarity. It will be understood that when an element is referred to as being "formed on" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Elastic modulusaaaaaaaaaa
Login to view more

Abstract

The invention discloses a pressure sensor. The pressure sensor comprises a film assembly used for converting pressure to be detected into self-deformation, a magnetic membrane body directly formed on the film assembly and used for providing a magnetic field, a pressure inlet used for conducting the pressure to be detected to the film assembly and a magnetic field sensor used for detecting the magnetic field changes and converting signals of the magnetic field changes into electric signals. In the working process, the pressure to be detected is input from the pressure inlet and conducted to the film assembly, the film assembly converts the pressure to be detected into self-deformation, and the magnetic membrane directly arranged on the film assembly generates magnetic flux intensity changes along with deformation of the film assembly. The magnetic field sensor detects the magnetic flux change signals and converts the signals into the electric signals to be output. The pressure sensor is simple in structure, a semiconductor packaging process is not needed, the process cost is low, the yield is high, and the pressure sensor is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a pressure sensor based on the magnetic principle. Background technique [0002] Pressure sensor is the most commonly used sensor, which is widely used in various industrial automatic control environments, involving many fields such as automobile, machinery industry, automation, and home appliances. [0003] There are many types of pressure sensors, such as resistance strain gauge pressure sensors, semiconductor strain gauge pressure sensors, piezoresistive pressure sensors, inductive pressure sensors, capacitive pressure sensors, etc. Among them, the piezoresistive pressure sensor has the advantages of high precision and good linearity, and is the most widely used. [0004] The piezoresistive pressure sensor is mainly a silicon resistance pressure sensor based on the MEMS principle. The silicon resistance pressure sensor is made of the piezoresistive effect of single crystal silicon, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01L1/12G01L9/16
Inventor 张文伟
Owner 苏州森特克测控技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap