Preparation method for laminated molybdenum disulfide film

A technology of molybdenum disulfide and thin films, which is applied in chemical instruments and methods, coatings, gaseous chemical plating, etc., can solve problems such as surface unevenness, structural defects and irregularities of single-layer molybdenum disulfide thin films, and achieve surface smoothness , structural rules, and the effect of controllable layers

Active Publication Date: 2015-07-01
厦门烯成石墨烯科技有限公司
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Problems solved by technology

Although adopting this invention can obtain large-area, single-layer molybdenum disulfide (MoS 2 ) film, but the monolayer molybdenum disulfide film (MoS 2 ) is structurally flawed, irregular, and has an uneven surface

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  • Preparation method for laminated molybdenum disulfide film
  • Preparation method for laminated molybdenum disulfide film
  • Preparation method for laminated molybdenum disulfide film

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preparation example Construction

[0020] A method for preparing a layered molybdenum disulfide thin film, using a molecular beam epitaxy growth method, comprising the following steps:

[0021] 1) Place the substrate in the ultra-vacuum reaction chamber of the molecular beam epitaxy equipment, and adjust the vacuum degree of the ultra-vacuum reaction chamber to 10 -6 ~10 -7 Pa, adjust the substrate temperature to 500°C-600°C, and degas for 20min-30min;

[0022] 2) Adjusting the substrate temperature to 650°C to 750°C, using molybdenum oxide powder and sulfur powder as the reaction source, respectively evaporating through the beam source furnace of the molecular beam epitaxy equipment to form molybdenum oxide molecular beams and sulfur molecular beams to spray onto the substrate surface, The molybdenum oxide molecular beam and the sulfur molecular beam react on the surface of the substrate to grow and form a layered molybdenum disulfide thin film.

[0023] Wherein, the method further includes controlling the g...

Embodiment

[0030] A method for preparing a single-layer molybdenum disulfide thin film, using a molecular beam epitaxy growth method, comprising the following steps:

[0031] 1) Place the substrate in the ultra-vacuum reaction chamber of the molecular beam epitaxy equipment, and adjust the vacuum degree of the ultra-vacuum reaction chamber to 10 -6 ~10 -7 Pa, adjust the substrate temperature to 500°C-600°C, and degas for 20min-30min;

[0032] 2) Adjusting the substrate temperature to 650°C to 750°C, using molybdenum oxide powder and sulfur powder as the reaction source, respectively evaporating through the beam source furnace of the molecular beam epitaxy equipment to form molybdenum oxide molecular beams and sulfur molecular beams to spray onto the substrate surface, The molybdenum oxide molecular beam and the sulfur molecular beam react on the substrate surface, and grow for 8 minutes to 10 minutes to form a single-layer molybdenum disulfide thin film.

[0033] Wherein, the substrate...

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Abstract

The invention discloses a preparation method for a laminated molybdenum disulfide film. An MBE (Molecular Beam Epitaxy) method is adopted. The preparation method comprises the following steps of 1) placing a substrate in an ultra-vacuum reaction cavity of an MBE instrument, adjusting the vacuum degree of the ultra-vacuum cavity to be (10<-6>)-(10<-7>)Pa, adjusting the temperature of the substrate to be 500-600 DEG C, and degassing for 20-30 minutes; 2) adjusting the temperature of the substrate to be 650-750 DEG C, taking molybdenum oxide powder and sulphur powder as reaction sources, evaporating the molybdenum oxide powder and sulphur powder respectively through a beam source furnace of the MBE instrument to form a molybdenum oxide molecular beam and a sulphur molecular beam, spraying the molybdenum oxide molecular beam and the sulphur molecular beam on the surface of the substrate, and reacting the molybdenum oxide molecular beam and the sulphur molecular beam on the surface of the substrate to form the laminated molybdenum disulfide film through growing. According to the preparation method, the laminated molybdenum disulfide film with controllable repetitive layers, regular growing structure and smooth surface is prepared through the MBE technology.

Description

technical field [0001] The invention relates to the technical field of molybdenum disulfide film preparation, in particular to a method for preparing a layered molybdenum disulfide film. Background technique [0002] Since the discovery of monoatomic layer graphene, its excellent electrical properties, mechanical properties, optical properties, and thermal properties have become an international research hotspot. However, since graphene is a zero-bandgap material, its application in semiconductor devices, especially in digital circuits, is greatly limited. In recent years, it has been discovered that two-dimensional transition metal chalcogenides have a graphene-like single-layer structure, and at the same time, they naturally have a large band gap inside, reflecting a number of excellent photoelectric properties and special physical phenomena, so they become The research focus of the international new generation of two-dimensional semiconductor optoelectronic device materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/16C30B29/46C23C16/30C23C16/448C23C16/52
Inventor 王振中
Owner 厦门烯成石墨烯科技有限公司
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