Common-gate stereoscopic CMOS (Complementary Metal-Oxide-Semiconductor Transistor) device, OLED (Organic Light Emitting Diode) device and manufacturing method thereof

Abstract

The invention provides a common-gate stereoscopic CMOS (Complementary Metal-Oxide-Semiconductor Transistor) device, an OLED (Organic Light Emitting Diode) device and a manufacturing method thereof. In the common-gate stereoscopic CMOS device, an NMOS transistor adopts an oxide semiconductor device, a PMOS transistor adopts an LTPS device, the PMOS transistor and the NMOS transistor share a gate, sources and drains of the two are formed through one etching process, the PMOS transistor and the NMOS transistor are arranged in a stacking mode, the occupied area can be effectively reduced, the integration degree of a circuit is improved, and the CMOS device and the LED device manufacturing process is simple and the cost is low.

Description

technical field [0001] The invention relates to the field of organic electroluminescent devices, in particular to a common gate three-dimensional CMOS device, an OLED device and a manufacturing method thereof. Background technique [0002] In flat panel display technology, organic light-emitting diodes (Organic Light-Emitting Diode, referred to as OLED) have many advantages such as thinness, active light emission, fast response speed, wide viewing angle, rich colors and high brightness, low power consumption, high and low temperature resistance, etc. It is recognized by the industry as the third-generation display technology following the liquid crystal display (LCD). [0003] According to the way of light emission, OLED is divided into bottom-emitting device (Bottom Organic Light-emitting Device, referred to as BEOLED) and top-emitting device (TOP Organic Light-emitting Device, referred to as TEOLED). According to the driving method, OLED is divided into passive organic li...

AI Technical Summary

Problems solved by technology

The above-mentioned CMOS manufacturing process requires a total of 4 ion implantation processes, at least 11 photolithography processes, and correspondingly requires at least 11 photomasks. The device structure is complex, the occupied area is large, and the manufacturing process is complicated and the cost is relatively high.

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