Magneto-resistor element with three-decker memory layer
A technology of magnetoresistance and memory layer, applied in the field of vertical magnetoresistance elements, can solve the problems of poor thermal stability and unsolved MR rate, and achieves reduction of damping coefficient, increase of current spin polarizability, and high MR rate. Effect
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[0037] Example one
[0038] figure 1 It is a schematic structural diagram of an MTJ element based on the present invention, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a lattice optimization layer 15, and a base layer 18 arranged adjacently from bottom to top. The memory layer 14 is composed of a first memory sublayer 14a, a second memory sublayer 14c, and an insertion layer 14b between the first memory sublayer 14a and the second memory sublayer 14c, which are sequentially adjacent.
[0039] The reference layer 12 is a ferromagnetic material, the magnetization direction of the reference layer 12 is unchanged and the magnetic anisotropy is perpendicular to the layer surface; in the memory layer 14, the first memory sublayer 14a and the second memory sublayer 14c are ferromagnetic materials, The insertion layer 14b is a non-magnetic material, and the magnetization direction of the memory layer 14 as a whole is variable and the m...
Example Embodiment
[0050] Example two
[0051] figure 2 Is in figure 1 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure, including the bottom electrode 11, the reference layer 12, the barrier layer 13, the memory layer 14, the lattice optimization layer 15, and the magnetic correction The layer 17 and the base layer 18, wherein the memory layer 14 is composed of a first memory sublayer 14a, a second memory sublayer 14c and an insertion layer between the first memory sublayer 14a and the second memory sublayer 14c. 14b composition. versus figure 1 The difference of the device structure in the middle is that a magnetic correction layer 17 is added between the lattice optimization layer 15 and the base layer 18.
[0052] The characteristics of the magnetic correction layer 17 are similar to those of the reference layer 12, in that the magnetization direction is unchanged and the magnetic anisotropy is perpendicular to the layer surface; the m...
Example Embodiment
[0055] Example three
[0056] image 3 Is in figure 2 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure, including the bottom electrode 11, the reference layer 12, the barrier layer 13, the memory layer 14, the lattice optimization layer 15, the spin The polarization stabilization layer 16, the magnetic correction layer 17, and the base layer 18. The memory layer 14 is composed of a first memory sublayer 14a, a second memory sublayer 14c, and between the first memory sublayer 14a and the second memory The sublayer 14c is composed of an intervening layer 14b. versus figure 2 The difference of the device structure in the middle is that a spin polarization stabilizing layer 16 is added between the magnetic correction layer 17 and the lattice optimization layer 15.
[0057] The spin-polarization stabilization layer 16 has a high electronic polarization conductivity, and the electron spin-polarization loss rate at the Fermi l...
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