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A magnetoresistive element with double optimized layers

A technology of magnetoresistance and lattice optimization layer, applied in fields such as magnetic field-controlled resistors, material selection, etc., can solve the problems of unsolved MR ratio, poor thermal stability, etc., to enhance vertical anisotropy and reduce damping coefficient , the effect of reducing the write current

Active Publication Date: 2017-12-15
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technical solution solves the problem of shifting the hysteresis curve of the storage layer, but does not solve the problems of low MR rate and poor thermal stability

Method used

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  • A magnetoresistive element with double optimized layers
  • A magnetoresistive element with double optimized layers
  • A magnetoresistive element with double optimized layers

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Experimental program
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Effect test

Embodiment 1

[0033] figure 1 It is a structural diagram of an MTJ element based on the present invention, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, a second crystal Grid optimization layer 15b and base layer 18.

[0034] The reference layer 12 and the memory layer 14 are ferromagnetic materials, the magnetization direction of the reference layer 12 is constant and the magnetic anisotropy is perpendicular to the layer surface, and the magnetization direction of the memory layer 14 is variable and the magnetic anisotropy is perpendicular to the layer surface. The magnetic perpendicular anisotropy energy of the reference layer 12 is sufficiently greater than the magnetic perpendicular anisotropy energy of the memory layer 14, which can be realized by adjusting the material, structure and film thickness of the reference layer 12, so that when the spin-polarized current passes through In the case o...

Embodiment 2

[0042] figure 2 is in figure 1 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the middle, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, The second lattice optimization layer 15b, the magnetic correction layer 17 and the base layer 18, that is, in figure 1 A magnetic correction layer 17 is added between the second lattice optimization layer 15b and the base layer 18 of the device.

[0043] The characteristics of the magnetic correction layer 17 are similar to those of the reference layer 12, in that the magnetization direction is constant and the magnetic anisotropy is perpendicular to the layer surface; the magnetization direction of the magnetic correction layer 17 is opposite to that of the reference layer 12, that is, both are antiparallel. The setting of the magnetic correction layer 17 and the reference layer 12 n...

Embodiment 3

[0047] image 3 is in figure 2 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the middle, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, The second lattice optimization layer 15b, the spin polarization stabilization layer 16, the magnetic correction layer 17 and the base layer 18, that is, in figure 2 A spin polarization stabilization layer 16 is added between the magnetic correction layer 17 and the second lattice optimization layer 15b of the middle device.

[0048] The spin polarization stable layer 16 has higher electron polarization conductivity, and the electron spin polarization loss rate on the Fermi level is close to zero, and the spin polarization stable layer 2 plays a role in stabilizing the lattice optimization layer 15. Function, its material can choose amorphous oxide or amorphous nitride of light atomic...

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Abstract

The invention provides a magneto-resistor element with double optimization layers. The magneto-resistor element comprises a reference layer, a barrier layer, a memory layer, a first lattice optimization layer, a second lattice optimization layer and a base layer which are adjacent to one another in sequence. The magnetization direction of the reference layer is changeless and perpendicular to the layer surface in a magnetic anisotropy mode. The magnetization direction of the memory layer is changeable and perpendicular to the layer surface in a magnetic anisotropy mode. The barrier layer is located between the memory layer and the reference layer and is adjacent to the memory layer and the reference layer respectively. The first lattice optimization layer is adjacent to the memory layer and is a material layer of a NaCl lattice structure, and the (100) crystal plane of the first lattice optimization layer is parallel to the substrate plane. The second lattice optimization layer is a NaCl lattice material layer including at least one doping element, and the (100) crystal plane of the second lattice optimization layer is parallel to the substrate plane. The magneto-resistor element further comprises a magnetic correction layer and a spin polarization stabilization layer which are sequentially arranged between the base layer and the second lattice optimization layer.

Description

technical field [0001] The invention relates to the field of storage devices, in particular to a vertical magnetoresistance element. Background technique [0002] Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction) is a magnetic multilayer film composed of an insulator or a semiconductor. Under the action of a voltage across the insulating layer, its tunnel current and tunnel resistance depend on the relative magnetization of the two ferromagnetic layers. Orientation, when this relative orientation changes under the action of an external magnetic field, a large tunneling magnetoresistance (TMR) can be observed. The magnetic random access memory made by people using the characteristics of MTJ is non-volatile magnetic random access memory (MRAM, Magnetic Random Access Memory). MRAM is a new type of solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity, and low power consumption. [0003] Spin Transfer Torque (ST...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10
Inventor 郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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