Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A magnetoresistive element with double optimized layers

A technology of magnetoresistance and lattice optimization layer, applied in fields such as magnetic field-controlled resistors, material selection, etc., can solve the problems of unsolved MR ratio, poor thermal stability, etc., to enhance vertical anisotropy and reduce damping coefficient , the effect of reducing the write current

Active Publication Date: 2017-12-15
SHANGHAI CIYU INFORMATION TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technical solution solves the problem of shifting the hysteresis curve of the storage layer, but does not solve the problems of low MR rate and poor thermal stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A magnetoresistive element with double optimized layers
  • A magnetoresistive element with double optimized layers
  • A magnetoresistive element with double optimized layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] figure 1 It is a structural diagram of an MTJ element based on the present invention, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, a second crystal Grid optimization layer 15b and base layer 18.

[0034] The reference layer 12 and the memory layer 14 are ferromagnetic materials, the magnetization direction of the reference layer 12 is constant and the magnetic anisotropy is perpendicular to the layer surface, and the magnetization direction of the memory layer 14 is variable and the magnetic anisotropy is perpendicular to the layer surface. The magnetic perpendicular anisotropy energy of the reference layer 12 is sufficiently greater than the magnetic perpendicular anisotropy energy of the memory layer 14, which can be realized by adjusting the material, structure and film thickness of the reference layer 12, so that when the spin-polarized current passes through In the case o...

Embodiment 2

[0042] figure 2 is in figure 1 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the middle, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, The second lattice optimization layer 15b, the magnetic correction layer 17 and the base layer 18, that is, in figure 1 A magnetic correction layer 17 is added between the second lattice optimization layer 15b and the base layer 18 of the device.

[0043] The characteristics of the magnetic correction layer 17 are similar to those of the reference layer 12, in that the magnetization direction is constant and the magnetic anisotropy is perpendicular to the layer surface; the magnetization direction of the magnetic correction layer 17 is opposite to that of the reference layer 12, that is, both are antiparallel. The setting of the magnetic correction layer 17 and the reference layer 12 n...

Embodiment 3

[0047] image 3 is in figure 2 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the middle, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a first lattice optimization layer 15a, The second lattice optimization layer 15b, the spin polarization stabilization layer 16, the magnetic correction layer 17 and the base layer 18, that is, in figure 2 A spin polarization stabilization layer 16 is added between the magnetic correction layer 17 and the second lattice optimization layer 15b of the middle device.

[0048] The spin polarization stable layer 16 has higher electron polarization conductivity, and the electron spin polarization loss rate on the Fermi level is close to zero, and the spin polarization stable layer 2 plays a role in stabilizing the lattice optimization layer 15. Function, its material can choose amorphous oxide or amorphous nitride of light atomic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a magnetoresistance element with a double-layer optimization layer, including a reference layer, a barrier layer, a memory layer, a first lattice optimization layer, a second lattice optimization layer and a base layer that are adjacent in sequence; The magnetization direction of the reference layer is constant and the magnetic anisotropy is perpendicular to the layer surface; the magnetization direction of the memory layer is variable and the magnetic anisotropy is perpendicular to the layer surface; the barrier layer is located between the memory layer and the reference layer. between layers and adjacent to the memory layer and the reference layer respectively; the first lattice optimization layer is adjacent to the memory layer, and the first lattice optimization layer is a material with a NaCl lattice structure layer and its (100) crystal plane is parallel to the substrate plane; the second lattice optimization layer is a NaCl lattice material layer containing at least one doping element and its (100) crystal plane is parallel to the substrate plane; further comprising A magnetic correction layer and a spin polarization stabilizing layer are arranged in sequence between the base layer and the second lattice optimization layer.

Description

technical field [0001] The invention relates to the field of storage devices, in particular to a vertical magnetoresistance element. Background technique [0002] Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction) is a magnetic multilayer film composed of an insulator or a semiconductor. Under the action of a voltage across the insulating layer, its tunnel current and tunnel resistance depend on the relative magnetization of the two ferromagnetic layers. Orientation, when this relative orientation changes under the action of an external magnetic field, a large tunneling magnetoresistance (TMR) can be observed. The magnetic random access memory made by people using the characteristics of MTJ is non-volatile magnetic random access memory (MRAM, Magnetic Random Access Memory). MRAM is a new type of solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity, and low power consumption. [0003] Spin Transfer Torque (ST...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10
Inventor 郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com