Preparation method of graphene chemical vapor deposition method based on gas phase kinetic equilibrium

Abstract

The invention discloses a method for preparing a graphene chemical vapor deposition method based on gas phase kinetic equilibrium. The method adopts a graphene chemical vapor phase method for preparing a spherical furnace body that is easy to gas phase dynamic equilibrium to prepare a furnace device, and is prepared according to the chemical vapor deposition method. Graphene, and set and control the gas phase kinetic parameters by computer to precisely control the gas phase dynamic balance on the surface of the graphene growth substrate material, so as to achieve the balanced deposition of carbon atoms on the surface of the graphene growth substrate material to prepare high-quality graphite ene purpose. The invention solves the difficult problem that the quality of graphene is affected by the unbalanced gas phase dynamics on the surface of the substrate material during the preparation process of graphene chemical vapor deposition, thereby realizing the controllable and high-quality preparation of graphene, and the obtained graphene grows uniformly, Few defects and high quality.

Description

technical field [0001] The invention belongs to the field of graphene chemical vapor deposition method preparation and its gas phase dynamics control, and in particular relates to a graphene chemical vapor deposition method preparation method based on gas phase kinetic equilibrium. Background technique [0002] Graphene is a new type of carbonaceous material, which is a two-dimensional crystal with carbon atoms arranged in a hexagonal structure. It is the first truly two-dimensional material. Due to its unique structure and photoelectric properties, it is expected to be widely used in nanoelectronic devices, transparent conductive films, composite materials, catalytic materials, field emission materials, solar cell electrodes, photoelectric converters, sensors and other fields. For this reason, how to prepare large-area and high-quality graphene has become a current research hotspot. The preparation methods of graphene mainly include mechanical exfoliation method, chemical ...

AI Technical Summary

Problems solved by technology

However, due to the gas-phase kinetic equilibrium problem in the preparation of graphene by chemical vapor deposition, it often results in uneven growth, many defects, and poor quality of graphene, which fails to meet the requirements of applied materials.

Images