Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Anti-radiation multibit-flip partitioned-matrix-code strengthening method for storers

A technology of multi-bit flipping and block matrix, which is applied to the application of error detection coding of multi-bit parity bits, error correction/detection using block codes, data representation error detection/correction, etc., which can solve the problem of high hardware performance overhead , high cost, poor reliability and other issues, to achieve the effect of small area and power consumption overhead

Inactive Publication Date: 2015-07-22
HARBIN INST OF TECH
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of low error correction ability, poor reliability, high hardware performance overhead and high cost in current error correction codes, the present invention proposes a memory anti-multi-bit flip block matrix code reinforcement method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anti-radiation multibit-flip partitioned-matrix-code strengthening method for storers
  • Anti-radiation multibit-flip partitioned-matrix-code strengthening method for storers
  • Anti-radiation multibit-flip partitioned-matrix-code strengthening method for storers

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0018] Specific implementation mode 1. Combination figure 2 Describe this specific implementation mode, the storage anti-multi-bit flip blocking matrix code reinforcement method described in this specific implementation mode is realized through the following steps:

[0019] Step 1. Divide a k-bit wide word data D into multiple m-bit wide data blocks, and number these data blocks and arrange them into k 1 ×k 2 The data matrix of k=k 1 ×k 2 ×m, and adjacent k 2 data blocks are not in the same row, not in the same column;

[0020] Step two, for k 1 ×k 2 For each row of the data matrix, the decimal addition calculation is performed in units of data blocks to obtain the horizontal redundancy bit H; for k 1 ×k 2 For each column of the data matrix, perform binary XOR calculation in units of data blocks to obtain vertical redundant bits V, and obtain codewords C={D, H, V} through the encoder;

[0021] Step 3, the decoder reads the code word C, and recalculates the data matri...

specific Embodiment approach 2

[0028] Embodiment 2. The difference between this embodiment and the memory anti-multi-bit flip block matrix code reinforcement method described in Embodiment 1 is that in the step 6, it is judged that the continuous k 2 The consistency process of the horizontal data block syndrome SH, the vertical data bit syndrome SV and the vertical data block syndrome S of a data block is:

[0029] When the horizontal data block syndrome SH, the vertical data bit syndrome SV and the vertical data block syndrome S of the data block are 1 at the same time, the correctness signal of the output data block is 1, otherwise, the correctness signal of the output data block is 0.

[0030] Below, combine figure 2 Taking 32-bit bytes as an example to specifically illustrate the method proposed by the present invention:

[0031] Encoding part:

[0032] A 32-bit wide word data D 0 -D 31 Divide into 8 4-bit wide data blocks in order, and arrange these data blocks into a 4×2 matrix form, such as f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an anti-radiation multibit-flip partitioned-matrix-code strengthening method for storers, relates to the field of anti-radiation strengthening circuits and solves problems that an error correcting code is low in correcting capability, poor in reliability, high in hardware performance overhead and high in cost. Date to be protected are logically subjected to modular division and matrix layout, high level of error correcting capability is achieved through a corresponding coding module and a decoding module, and area and power consumption is quite low; in addition, a user can adjust parameters of a data matrix according to different requirements, balance is concerned between the error correcting capability and performance consumption, and an optimal scheme is obtained. The anti-radiation multibit-flip partitioned-matrix-code strengthening method is higher in error correcting capability as compared with a traditional method with a two-dimension code and even higher than the error correcting capability of difference-set code, characteristics of smaller area and lower functional consumption are achieved as compared with the difference-set code, and the method is suitable for the storers with higher demands on reliability and performance.

Description

technical field [0001] The invention relates to the field of anti-radiation hardened circuits. Background technique [0002] The reliability of integrated circuits has always been one of the most concerned issues for designers and users. As integrated circuits enter the nanoscale process manufacturing stage, while their performance has been greatly improved, the reduction of feature size has also brought many problems, such as the reduction of power supply voltage, the increase of frequency, and the increase of design complexity. This makes the integrated circuit more sensitive to the space radiation environment. For electronic devices used in aerospace, after being bombarded by various high-energy particles in space, various radiation effects will occur, seriously affecting the normal operation of the circuit, and even causing failure. Among various radiation effects, soft errors caused by single-event upsets are the main factor affecting memory reliability. When radiati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03M13/11
Inventor 肖立伊柳姗姗李杰郭靖
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com