Novel Wafer Bonding device

Abstract

The invention discloses a novel Wafer Bonding device, belongs to the field of wafer welding devices and solves the problems of low production efficiency, high failure rate, rapid graphite accessory damage, high graphite material consumption and the like of existing Wafer Bonding process technology. The novel Wafer Bonding device comprises a vacuum cavity, an upper pressure control system and a lower pressure control system are arranged on the inner upper wall and the inner lower wall of the vacuum cavity respectively, the upper pressure control system is movably connected with the front wall of the vacuum cavity through a telescopic connecting shaft, the telescopic connecting shaft drives the upper pressure control system to rise and fall, an upper microwave generator and a lower microwave generator are sequentially arranged on the outer side wall of the vacuum cavity and correspondingly irradiate an upper heater and a lower heater respectively, and an upper temperature detector and a lower temperature detector are sequentially arranged on the inner side wall of the vacuum cavity, monitor the temperatures of the upper heater and the lower heater in real time and are connected with the upper microwave generator and the lower microwave generator to form a feedback adjusting system.

Description

technical field [0001] The novel Wafer Bonding equipment of the invention belongs to the field of wafer welding equipment. Background technique [0002] At present, in order to improve the light output efficiency and heat dissipation performance of the LED chip production process, a large number of LED chip substrates are replaced by the Wafer Bonding process. The substrate is a metal substrate with good thermal conductivity, electrical conductivity and high light reflection efficiency, or a silicon substrate. substrate. [0003] In the traditional Wafer Bonding process, graphite heaters are used to heat and graphite fixtures are used as temperature conductors to heat and press the bonding materials. The heating rate and cooling rate are slow, and the life of the graphite heater is short and the failure rate is high, resulting in Wafer The cost of bonding process is rising rapidly. [0004] Microwaves have great penetrating ability. When heating, heat can be generated dire...

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Problems solved by technology

[0005] The present invention overcomes the deficiencies in the prior art, solves the problems of low production efficiency, high equipment failure rate, damaged graphite parts, and large consumption of graphite materials in the existing Wafer Bonding process technology, and aims to provide a new Wafer Bonding Bonding process equipment

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