Preparation method of Fe3N polycrystalline film based on GaN substrate

A thin film preparation and substrate technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problems of slow growth rate of N thin film, unfavorable analysis, etc., to achieve mass production and simple process reliable effect

Inactive Publication Date: 2015-08-12
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the MOCVD method grows ε-Fe 3 The growth rate of the N film is relatively slow, and the thickness of the prepared sample is very thin, only about tens of nanometers.
A sample of this thickness is unfavorable for studying the intrinsic properties of the material: firstly, the ε-Fe 3 The N signal intensity is weaker than that of thicker films, which is not conducive to analysis

Method used

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  • Preparation method of Fe3N polycrystalline film based on GaN substrate
  • Preparation method of Fe3N polycrystalline film based on GaN substrate
  • Preparation method of Fe3N polycrystalline film based on GaN substrate

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Effect test

Embodiment 1

[0029] A kind of Fe based on GaN substrate of the present embodiment 3 N polycrystalline film preparation method, comprises the following steps

[0030] (1) A GaN film with a thickness of 3 microns is used as a substrate, and it is cleaned with alcohol in an ultrasonic cleaner for 5 minutes. The GaN film is an unintentionally doped single-crystal film.

[0031] (2) A layer of amorphous iron film is sputtered on the GaN substrate in step 1 by magnetron sputtering, wherein the purity of the iron target is not lower than 99.99%. The condition is the cavity base pressure: 2×10 -5 Pa, sputtering power: 100W, sputtering time: 1800 seconds.

[0032] (3) Put the sample obtained in step 2 into a nitriding annealing furnace for nitriding. The conditions are temperature: 900° C., carrier gas: nitrogen, flow rate of ammonia: 4 slm, and time: 3.5 hours.

[0033] (4) The sample obtained in step 3 was etched by RIE for 18 minutes.

[0034] (5) Etch the sample obtained in step 4 with ICP...

Embodiment 2

[0037] A kind of Fe based on GaN substrate of the present embodiment 3 N polycrystalline film preparation method, comprises the following steps

[0038] (1) A GaN thin film with a thickness of 3 microns is used as a substrate, and it is cleaned with alcohol in an ultrasonic cleaner for 3 minutes.

[0039] (2) A layer of amorphous iron film is sputtered on the GaN substrate in step 1 by magnetron sputtering, wherein the purity of the iron target is not lower than 99.99%. The condition is the cavity base pressure: 1×10 -5 Pa, sputtering power: 100W, sputtering time: 1200 seconds.

[0040] (3) Put the sample obtained in step 2 into a nitriding annealing furnace for nitriding. The conditions are temperature: 800° C., carrier gas: nitrogen, flow rate of ammonia: 4 slm, and time: 3.5 hours.

[0041] (4) The sample obtained in step 3 was etched by RIE for 15 minutes.

[0042] (5) The sample obtained in step 4 was etched by ICP for 20 seconds to obtain a GaN substrate-based Fe3N ...

Embodiment 3

[0045] A kind of Fe based on GaN substrate of the present embodiment 3 N polycrystalline film preparation method, comprises the following steps

[0046] (1) A GaN thin film with a thickness of 3 microns is used as a substrate, and it is cleaned with alcohol in an ultrasonic cleaner for 8 minutes.

[0047](2) A layer of amorphous iron film is sputtered on the GaN substrate in step 1 by magnetron sputtering, wherein the purity of the iron target is not lower than 99.99%. The condition is the cavity base pressure: 3×10 -5 Pa, sputtering power: 100W, sputtering time: 2400 seconds.

[0048] (3) Put the sample obtained in step 2 into a nitriding annealing furnace for nitriding. The conditions are temperature: 1000° C., carrier gas: nitrogen, flow rate of ammonia: 4 slm, and time: 3.5 hours.

[0049] (4) The sample obtained in step 3 was etched by RIE for 20 minutes.

[0050] (5) The sample obtained in step 4 was etched by ICP for 40 seconds to obtain a GaN substrate-based Fe3N ...

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Abstract

The invention relates to a preparation method of Fe3N polycrystalline film based on GaN substrate, which belongs to the technical field of magnetic material preparation. The invention adopts magnetron sputtering and high-temperature nitridation to prepare the Fe3N polycrystalline film, and thereby the Fe3N polycrystalline film with the thickness of over 100 nanometer can be prepared under the prerequisite that the technology is simple and reliable, and the performance symptoms and the batch production of the Fe3N polycrystalline film can be facilitated.

Description

technical field [0001] The present invention relates to a Fe based on GaN substrate 3 The invention discloses a preparation method of N polycrystalline film, which belongs to the technical field of magnetic material preparation. Background technique [0002] In recent years, with the rapid development of spintronics and the research on ferromagnetic layer materials, ε-Fe 3 N has been considered as a candidate material for spin injection and detection layers in spintronic devices due to its spin polarizability up to 0.5. To realize nitrogen-based magnetic tunneling heterojunction, highly oriented crystal α-Fe / AlN / Fe on Si substrate 3 N trilayer structures have been successfully fabricated by molecular beam epitaxy. [0003] Considering ε-Fe 3 The lattice matching of N and GaN is very good, and it has been reported that metalorganic chemical vapor deposition (MOCVD), that is, NH 3 and FeCp 2 The method of direct chemical reaction to grow magnetic ε-Fe 3 N film (growth c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/203C23C14/35C23C14/58
CPCC23C14/35C23C14/58H01L21/02266
Inventor 方贺男陶志阔
Owner NANJING UNIV OF POSTS & TELECOMM
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