Device and method for testing integrated circuit plate and integrated circuit metal layer

Abstract

The invention relates to the technical field of a semiconductor integrated circuit, and discloses a device and a method for testing an integrated circuit plate and an integrated circuit metal layer. The integrated circuit plate comprises scribing grooves, and testing structures, located in the scribing grooves, of the integrated circuit metal layer. Each testing structure comprises: a first strip-shaped polycrystalline silicon resistor; a metal plate located on and in cross arrangement with the first strip-shaped polycrystalline silicon resistor, wherein the length and width of the metal plate are no less than 10 microns; a second strip-shaped polycrystalline silicon resistor; and a plurality of metal strips located on and in cross arrangement with the second strip-shaped polycrystalline silicon resistor, wherein the plurality of metal strips are arranged in parallel at intervals, and the width of each metal strip is no larger than 3 microns. The metal plate, the metal strips, and the integrated circuit metal layer are located at the same layer and are prepared at the same layer. By adopting the technical scheme in the invention, the metal layer is tested via an electrical performance test, so that the test accuracy of the metal layer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to an integrated circuit board, a test device and method for an integrated circuit metal layer. Background technique [0002] In integrated circuits, metal layers are used for interconnection between devices, as well as pads for package bonding. Among these metal layer structures, some are large-sized metal plates, and some are small-sized. Metal strips (or blocks of metal of small size), some arranged in isolation, some arranged in dense arrangements. [0003] The manufacture of integrated circuits includes the front-end process and the back-end process. The front-end process is a series of process steps implemented on the semiconductor wafer, including photolithography, etching, thin film, metallization, diffusion, oxidation, alloy and other processes. , the manufacturing process of the metal layer belongs to the front-end process; the back-end process o...

AI Technical Summary

Problems solved by technology

[0005] At present, there is no test structure for the metal layer. The existing detection of the metal layer uses a visual inspection method to confirm whether the metal layer is normal, such as using a microscope, but this method is greatly affected by human subjective factors, resulting in accuracy low, and the efficiency of this detection method is very low

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