Metal film etching solution composition and etching method using the same

Abstract

The invention discloses an etching solution composition capable of simultaneously etching a double film of a copper film and an indium tin oxide film or a double film of a copper film and a metal film, and an etching method using the composition. The above etching solution composition comprises: 5 to 20% by weight of hydrogen peroxide; 0.1 to 5% by weight of sulfonic acid compounds; 0.1 to 2% by weight of carbonyl organic acid compounds; 0.1 to 0.4% by weight of fluorine compounds; 3% by weight of azole compounds; and, the remaining weight% of water.

Description

technical field [0001] The present invention relates to a metal film etchant composition, in more detail, to an etchant composition capable of simultaneously etching a double film of a copper film and an indium tin oxide film, a double film of a copper film and a metal film, and an etching liquid composition utilizing the combination Object etching method. Background technique [0002] Recently, as the quality, definition, and area of ​​display panels such as liquid crystal displays (LCDs) have increased, the number of pixels (pixels) forming pixel electrodes has increased, and thus it is necessary to increase the response speed of the display panel. For this reason, an array (Array) substrate process is being developed and used. This array (Array) substrate process applies existing copper metal wires (metal wire) used as low-resistance wiring to the gate (Gate) and source / Drain (S / D, Source / Drain) electrode. This array substrate technology has the advantage of being able...

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Problems solved by technology

However, with respect to this existing etchant composition, although there is no particular problem when etching a single film of a copper film or an indium tin oxide film, generally speaking, the etching speed of an indium tin oxide film is faster than that of a copper film. Therefore, when etching the double film of copper film and indium tin oxide film, there are disadvantages such as the tail (Tail) of the barrier film, that is, the indium tin oxide film, poor etching profile, and poor taper angle.

Moreover, with the conventional etchant composition, due to lack of stability, precipitated water such as residue (residue) and residual film (residual layer) may also be generated along with the passage of time of use.

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