Etchant composition for copper-based metal layer and method for manufacturing array substrate of display device using same
An etchant and composition technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor etching profile and etching residue, difficult to prevent metal oxide layer damage, etc., and achieve excellent etching Linearity, excellent etch profile, no etch residue effect
Active Publication Date: 2020-04-17
DONGWOO FINE CHEM CO LTD
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Problems solved by technology
Otherwise, poor etch profiles and etch residues may occur
[0006] Furthermore, it is difficult to prevent damage to the metal oxide layer to be protected, other than the layer to be etched
Method used
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preparation example Construction
[0065] Preparation of etchant composition
[0066] 6 kg of each etchant composition of Examples 1 to 7 and Comparative Examples 1 to 8 were prepared using the components in amounts shown in Table 1 below.
[0067] [Table 1]
[0068]
[0069] Note that in Table 1,
[0070] ATZ: Aminotetrazole
[0071] NHP: sodium dihydrogen phosphate
[0072] APM: Ammonium dihydrogen phosphate
[0073] PA: potassium acetate
[0074] AA: Ammonium acetate
[0075] SA: sodium acetate
[0076] TEG: Triethylene glycol
[0077] IDA: iminodiacetic acid
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The invention discloses an etchant composition for a copper-based metal layer comprising a predetermined amount of hydrogen peroxide, an azole compound, a water-soluble compound having a nitrogen atom and a carboxyl group in the molecule, a phosphate, an acetate, a polyol surfactant And water. There is also provided a method of manufacturing an array substrate for a display device using the etchant composition.
Description
technical field [0001] The invention relates to an etchant composition for a copper-based metal layer and a method for manufacturing an array substrate for a display device using the etchant composition. Background technique [0002] In a semiconductor device, forming a metal line on a substrate generally includes forming a metal layer using sputtering, coating a photoresist, exposing and developing so that the photoresist is formed in a selected area, and performing etching, each of which A cleaning process is performed before and after a single process. The etching process is performed so as to leave the metal layer in a selected area by using a photoresist as a mask, and may include dry etching using plasma or the like or wet etching using an etchant composition. [0003] Lines conventionally used for gate electrodes and source / drain electrodes are formed of metal layers including aluminum or its alloys and other metals. Aluminum is cheap and has low resistance, but has...
Claims
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IPC IPC(8): C23F1/18H01L21/3213H01L21/77
CPCC23F1/18H01L21/32134H01L27/1259
Inventor 梁承宰朴昇煜李恩远
Owner DONGWOO FINE CHEM CO LTD