Etchant composition for copper-based metal layer and method for manufacturing array substrate of display device using same

Abstract

The invention discloses an etchant composition for a copper-based metal layer comprising a predetermined amount of hydrogen peroxide, an azole compound, a water-soluble compound having a nitrogen atom and a carboxyl group in the molecule, a phosphate, an acetate, a polyol surfactant And water. There is also provided a method of manufacturing an array substrate for a display device using the etchant composition.

Description

technical field [0001] The invention relates to an etchant composition for a copper-based metal layer and a method for manufacturing an array substrate for a display device using the etchant composition. Background technique [0002] In a semiconductor device, forming a metal line on a substrate generally includes forming a metal layer using sputtering, coating a photoresist, exposing and developing so that the photoresist is formed in a selected area, and performing etching, each of which A cleaning process is performed before and after a single process. The etching process is performed so as to leave the metal layer in a selected area by using a photoresist as a mask, and may include dry etching using plasma or the like or wet etching using an etchant composition. [0003] Lines conventionally used for gate electrodes and source / drain electrodes are formed of metal layers including aluminum or its alloys and other metals. Aluminum is cheap and has low resistance, but has...

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Problems solved by technology

Otherwise, poor etch profiles and etch residues may occur

[0006] Furthermore, it is difficult to prevent damage to the metal oxide layer to be protected, other than the layer to be etched

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