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Structure for raising highly reflective material LED light source luminous flux output

A technology of LED light source and luminous flux, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting product quality, conductive vias overflowing, and achieve the effect of improving luminous flux output, improving quality, and preventing re-oxidation

Inactive Publication Date: 2015-08-19
CHENGDU SIKETAI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the formation of conductive vias on the substrate, glue overflow will occur at the conductive vias during compression molding, thereby affecting product quality

Method used

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  • Structure for raising highly reflective material LED light source luminous flux output
  • Structure for raising highly reflective material LED light source luminous flux output

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A structure for improving the luminous flux output of a highly reflective material LED light source, the structure comprising: a substrate 8; a circuit layer on the substrate 8; a GaN LED chip array 3 on the substrate 8; and between the GaN LED chip arrays 3, And there is a fluorescent powder silica gel layer 2 between the GaN LED chip array 3 and the wiring layer. The fluorescent powder silica gel layer 2 and the circuit layer are adjacent to the dam glue 4 . Wherein, the wiring layer includes the front wiring layer 5 on the upper surface of the substrate 8, the back wiring layer 7 on the lower surface of the substrate 8, and the inside of the conductive via hole on the substrate 8, and connects the front wiring layer 5 and the back wiring layer. The circuit layer 7 is electrically connected to the connection circuit layer 6, and the connection circuit layer 6 on the inner wall of the conductive via hole is filled with a plug, and the plug is preferably a rosin plug. ...

Embodiment 2

[0022] On the basis of the first embodiment, the front circuit layer 5 is a GBL circuit layer, and the back circuit layer 7 is a GBL circuit layer, and the thickness of the GBL circuit layer is 0.05mm larger than that of the GBL circuit layer.

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PUM

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Abstract

The present invention discloses a structure for raising a highly reflective material LED light source luminous flux output, relating to a structure for raising an LED light source luminous flux output. The invention aims to provide the structure for raising the highly reflective material LED light source luminous flux output, and a glue overflow phenomenon in the molding process can be prevented. The technical scheme is that the structure comprises a substrate, a circuit layer, a GaN LED chip array, and a phosphor layer silica gel layer. The phosphor layer silica gel layer and the line layer are adjacent to dam glue. The line layer comprises a front line layer, a back line layer and a connection line layer. A plug member is arranged between the connection line layers of the inner walls of a conductive through hole, and a slope reflection wall 9 is formed at an insulation layer surface facing the GaN LED chip array. The structure is applicable to raise the highly reflective material LED light source luminous flux output.

Description

technical field [0001] The invention relates to an LED light source structure, in particular to a structure for improving the luminous flux output of the LED light source. Background technique [0002] GaN LED chips, which can also be understood as light-emitting diodes, are bonded on the upper surface of a substrate (aluminum base, copper base or ceramics, etc.). The positive and negative electrodes of the chip are connected in series or in parallel through metal wires (gold wires, aluminum wires, etc.), and the ends of the series are connected to the positive and negative electrode circuit layers of the aluminum substrate through metal wires. In this way, the array of GaN LED chips constitutes an electrical device capable of carrying a certain voltage (the addition of series voltages) and a certain current (the addition of parallel currents). The GaN LED chip is covered with silica gel (including silica gel mixed with phosphor powder), and the silica gel is surrounded by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/60
CPCH01L33/48H01L33/60
Inventor 于耀田陆皓杨婷
Owner CHENGDU SIKETAI TECH
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