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A Self-Driven Transient Stress Sensing Device

A sensing device and transient stress technology, applied in the direction of measuring device, measuring force, instrument, etc., can solve the problems of low current output density, no self-driven transient pressure sensing device, etc., to improve the signal response strength , suitable for large-scale production, the effect of reducing costs

Active Publication Date: 2018-05-25
BEIJING INST OF NANOENERGY & NANOSYST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low current output density of contact triboelectric nanogenerators, a large area is generally required to effectively drive the monitoring equipment.
Therefore, so far, no self-driven transient pressure sensing device has been reported

Method used

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  • A Self-Driven Transient Stress Sensing Device
  • A Self-Driven Transient Stress Sensing Device
  • A Self-Driven Transient Stress Sensing Device

Examples

Experimental program
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Embodiment 1

[0070] Cut 2 plastic plates of length 60mm x width 60mm x thickness 2mm to fix the LED array. First, insert the array of LEDs into the corresponding holes in a plastic plate, with the cathodes of all diodes connected together and connected to ground. Then insert the anode of the light-emitting diode array into another corresponding plastic plate below, and make an area of ​​10mm at the position of the anode 2 The electrode array, and then cover a layer of polyolefin material layer on the electrode, it is polarized by corona discharge, Figure 7 Schematic diagram of the fabricated sensor structure. When pressure is applied to a certain area of ​​the polymer friction material layer, the corresponding LED of this area will emit light, and the stronger the light intensity, the greater the pressure. By analyzing the luminous intensity of the LED array, the transient pressure distribution applied on the device can be determined.

[0071] Figure 8 It is the change diagram of the...

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Abstract

The present invention utilizes the characteristics of the electret material to form an efficient contact-separation triboelectric nanogenerator between the stress application object and the contact layer of the sensing device, and cleverly combines it with a light-emitting diode to construct a self-driven Visualized stress sensing device. Each light-emitting diode corresponds to a triboelectric nanogenerator unit. When external stress is applied to the contact layer of the sensor, the corresponding output signal generated drives the corresponding diode to emit light. The luminous intensity of the diode increases as the applied stress increases. The magnitude of the stress can be determined by analyzing the luminous intensity of the diode, thereby realizing the visualization of stress sensing. The stress visualization device of the present invention has the characteristics of self-driven output, can realize the analysis of external stress without external power supply, and can be used to detect the spatial distribution of pressure.

Description

technical field [0001] The invention relates to a stress sensing device, in particular to a self-driven transient stress sensing device. Background technique [0002] The existing transient stress sensing technology is mainly based on two kinds: (1) using field-effect transistors to modulate the channel resistance under different pressures to realize the sensing of external pressure; (2) using the piezoelectric photoelectron effect to The modulation of nanowire resistance is used to realize the sensing of external pressure. However, both of these two technologies require an external power supply as the energy supply unit of the device, and if there is no power supply, they cannot work normally. This greatly limits the development and application of these pressure sensing technologies. [0003] Developing a transient pressure sensing technology that can work without an external power source is the key to solving the above problems, and the successful development of triboele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02N1/04G01L1/00
Inventor 杨亚张虎林王中林
Owner BEIJING INST OF NANOENERGY & NANOSYST
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