A thin film high temperature photoelectric physical property testing device

Abstract

The invention discloses a thin-film high-temperature optoelectronic physical property testing device, which comprises a temperature-controlled vacuum tube furnace, a sample testing platform, a temperature measuring unit, a thin-film surface reflected light intensity measuring unit, a thin-film resistance detecting unit and a computer. The film to be tested is heated by a temperature-controlled vacuum tube furnace, and placed vertically in the constant temperature zone of the furnace; the thermocouple is placed near the sample in the vacuum furnace to detect the sample temperature in real time. The laser light can be incident on the surface of the film in the furnace from the optical window and reflected back to the outside to be received and measured by the photoelectric detection module. The sample is connected to an external constant current source and a nanovoltmeter through the four metal probes on the test bench, and the program automatically realizes the fast switching measurement of the probes and calculates the sheet resistance by using the Van der Pauw method. The system can synchronously generate film reflection light intensity and resistance variation curves with temperature in the room temperature to high temperature region and calculate the photoelectric related physical property parameters of the film, which provides a guarantee for high reliability and automation of wide temperature photoelectric physical property measurement of materials.

Description

technical field [0001] The invention relates to a physical property testing device, in particular to a thin film high temperature photoelectric physical property testing device. Background technique [0002] Functional thin films, especially photoelectric functional thin films, are the material basis of microelectronics and optoelectronics, and are widely used in the semiconductor electronics industry. Among them, chalcogenide phase-change thin films are widely used in high-density information storage and clean energy due to their unique temperature-dependent optical and electrical reversible change characteristics, and have become a research hotspot at home and abroad. [0003] In practical applications, the performance of functional thin films, especially semiconductor optoelectronic thin film devices, is easily affected by the external temperature, so it is very important to study the temperature characteristics of thin film materials for their application in devices. Es...

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Problems solved by technology

[0005] The object of the present invention is to provide a thin-film high-temperature optoelectronic physical property testing device, which can realize accurate measurement of thin-film high-temperature optoelectronic physical properties, and can be used to simultaneously measure the relationship between the reflected light intensity and surface resistance of functional thin films with temperature changes, and solve the problem of high-temperature optoelectronic physical properties of thin-film materials. Engineering Problems of Measurement

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