Memory and its driving circuit

Abstract

The present invention relates to a memory and a driving circuit thereof. The driving circuit comprises a level shifting unit and a substrate bias unit, wherein the level shifting unit comprises a first node for inputting an access level, a second node for inputting a substrate bias level, and a third node for outputting a driving level, the third node is connected to the word line or bit line in the memory, the substrate bias unit is suitable for providing the substrate bias level, the substrate bias level is less than the access level, and the memory comprises the driving circuit and a memory array. With the memory and the driving circuit of the present invention, the driving capability of the memory driving circuit can be improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a memory and its driving circuit. Background technique [0002] In the information age, information storage is one of the most important technical content in information technology. DRAM, EEPROM, flash memory and other memories are being used more and more widely. [0003] In order to achieve information access, such as reading or programming information, the memory needs to switch between different levels to obtain the required operating voltage: for example, in different operating modes of the memory, the drive circuit of the memory needs Provide different access voltages to the bit line and word line for the target memory cell. For example, in a read operation, the drive circuit needs to load a read voltage of about 2V on the selected bit line, while in a programming operation, the drive circuit needs A programming voltage of 10V is applied to the selected bit line t...

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Problems solved by technology

However, the above-mentioned transistors have a large substrate area and have relatively large parasitic loads. Therefore, in the driving circuit of the prior art, the charging and discharging process of the nodes (V11, V12) is easily affected by the parasitic loads and power supply. Influenced by the level, especially when the transistor is in the boundary condition (such as the density of the memory storage array becomes higher and the power supply voltage is lower), the driving ability of the transistor will be weakened accordingly, causing the driving circuit to work poorly, and the driving circuit cannot provide the corresponding bit. line and word line provide accurate operating voltage

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