Semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of large discrete resistance, inability to obtain withstand voltage, and inability to obtain epitaxial wafers, etc., to achieve the effect of suppressing the reduction in withstand voltage
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no. 1 approach
[0022] figure 1 is a schematic cross-sectional view showing the semiconductor device according to the first embodiment.
[0023] The semiconductor device 1 is a zener diode including a cathode electrode 10 as a lower electrode and an anode electrode 11 as an upper electrode.
[0024] On the cathode electrode 10 is provided with n ++ type sixth semiconductor region 20 . The sixth semiconductor region 20 is provided between the first semiconductor region 30 and the second semiconductor region 40 and the cathode electrode 10 . In addition, between the sixth semiconductor region 20 and the anode electrode 11, n - type of the first semiconductor region 30 .
[0025] set n + The second semiconductor region 40 is shaped so that it is located between the anode electrode 11 and the cathode electrode 10 and is adjacent to the first semiconductor region 30 . An n-type impurity element (such as phosphorus (P), arsenic (As), etc.) is introduced into the second semiconductor region 40...
no. 2 approach
[0067] Figure 5 is a schematic cross-sectional view of the semiconductor device according to the second embodiment.
[0068] In the semiconductor device 2 , the third semiconductor region 50 is provided between the anode electrode 11 and the first semiconductor region 30 and the second semiconductor region 40 . That is, a part of the third semiconductor region 50 is exposed from the second semiconductor region 40 .
[0069] Here, the junction withstand voltage V of the second semiconductor region 40 and the third semiconductor region 50 23 , the junction withstand voltage V of the end portion 40e of the second semiconductor region 40 and the third semiconductor region 50 2e3 , the end portion 50e of the third semiconductor region 50 and the junction withstand voltage V of the first semiconductor region 30 2e3 The relationship between the junction withstand voltage V 23 designed to withstand a voltage higher than the second junction V 2e3 and the third junction withstand ...
no. 3 approach
[0072] Figure 6 is a schematic cross-sectional view of the semiconductor device according to the third embodiment.
[0073] In the semiconductor device 3 , the end portion 50 e of the third semiconductor region 50 in the portion other than the surface 50 u on the anode electrode 11 side of the third semiconductor region 50 is surrounded by the fourth semiconductor region 60 . In addition, the portion other than the surface 60 u on the side of the anode electrode 11 of the fourth semiconductor region 60 is surrounded by the first semiconductor region 30 .
[0074] In the semiconductor device 3 , the end 50 e of the third semiconductor region 50 is surrounded by the fourth semiconductor region 60 , and thus the withstand voltage of the end 50 e of the third semiconductor region 50 becomes higher than that of the semiconductor device 2 .
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