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High performance infrared chalcogenide glass and preparation method thereof

A chalcogenide glass, a high-performance technology, applied in the field of optical glass and infrared transmission materials, can solve the problems of unstable optical properties, etc., and achieve the effects of good glass state stability, easy homogenization, and high yield

Inactive Publication Date: 2015-09-23
XUZHOU SIMEIER OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a high-performance infrared chalcogenide glass and its preparation method to solve the problem of unstable optical properties caused by relaxation of commonly used chalcogenide glass optical devices during use

Method used

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  • High performance infrared chalcogenide glass and preparation method thereof
  • High performance infrared chalcogenide glass and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Example 1: Chalcogenide glass composition is Ge 9 As 28 Se 63

[0016] Use Ge, As and Se with a purity of ≥99.999% as raw materials to prepare a glass mixture according to the above composition; put the mixture into a clean quartz ampoule with a hydroxyl content of less than 10ppm, and vacuum to ≤10 -3 Pa, seal the quartz ampoule with flame; put the sealed quartz ampoule containing glass mixture into a swing furnace, heat it to 850℃, keep it for 24 hours, take it out and cool it in the air, then keep it at 190℃3 It is annealed for hours, and finally cooled to room temperature at 0.2°C / min. Take out the quartz glass from the ampoule to obtain the prepared glass, figure 1 It is a glass photo taken with an infrared camera with a working wavelength of 7.5 to 13 μm, and the fingers with a higher temperature behind the glass can be clearly seen.

[0017] Test the density of glass by Archimedes method; test the transition temperature of glass with TAQ2000 differential scanning calo...

Embodiment 2

[0019] Example 2: Chalcogenide glass composition is Ge 12 As 24 Se 64

[0020] Use Ge, As and Se with a purity of ≥99.999% as raw materials to prepare a glass mixture according to the above composition; put the mixture into a clean quartz ampoule with a hydroxyl content of less than 10ppm, and vacuum to ≤10 -3 Pa, use flame to seal the quartz ampoule; put the sealed quartz ampoule with glass mixture into a swing furnace, heat it to 875℃, keep it for 36 hours, take it out and cool it in the air, then keep it at 200℃4 It is annealed for hours, and finally cooled to room temperature at 0.5°C / min. The quartz glass is taken out of the ampoule to obtain the prepared glass.

[0021] Test the density of glass by Archimedes method; test the transition temperature of glass with TAQ2000 differential scanning calorimeter, the heating rate is 10℃ / min; use INSTRON Wilson-Wolpert Tukon 2100B hardness tester to test the microstructure of double-sided polished glass Hardness, load and time are 100...

Embodiment 3

[0023] Example 3: Chalcogenide glass composition is Ge 15 As 20 Se 65

[0024] Use Ge, As and Se with a purity of ≥99.999% as raw materials to prepare a glass mixture according to the above composition; put the mixture into a clean quartz ampoule with a hydroxyl content of less than 10ppm, and vacuum to ≤10 -3 Pa, seal the quartz ampoule with flame; put the sealed quartz ampoule with glass mixture into a swing furnace, heat it to 900℃, keep it for 48 hours, take it out and cool it in the air, then keep it at 210℃5 It is annealed for hours, and finally cooled to room temperature at 1°C / min. The quartz glass is taken out of the ampoule to obtain the prepared glass.

[0025] Test the density of glass by Archimedes method; test the transition temperature of glass with TAQ2000 differential scanning calorimeter, the heating rate is 10℃ / min; use INSTRON Wilson-Wolpert Tukon 2100B hardness tester to test the microstructure of double-sided polished glass Hardness, load and time are 100g an...

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Abstract

The present invention discloses a high performance infrared chalcogenide glass and a preparation method thereof, and belongs to the optical glass and infrared transmitting materials. Chemical composition of the glass is GexAsySe1-x-y, wherein 0.09<=x<=0.15, 0.20<=y<=0.28. The glass is synthesized by melting in vacuum high purity germanium, arsenic and selenium as raw materials. The chalcogenide glass synthesized by the method has the density of 4.3-4.4g / cm<3>, the glass transition temperature of 190-220 DEG C, the microhardness of 175-195kg / mm<2>, the thermal expansion coefficient of 15-17*10<-6> / K , the refractive index of 2.56-2.60 at the wavelength of 10mum, the temperature coefficient of the refractive index of 20-50*10<-6> / K, and the light transmission range of 1-15mum, and the refractive index change of the glass under sub-bandgap light is less than 10<-3>. The chalcogenide glass has the advantages that: 1. glass relaxation is extremely slow, optical performance is stable; 2. the glass is easy to homogenize, and high in yield; and 3. ultra-pure glass homogeneous glass can be easy to obtain by way distillation.

Description

Technical field [0001] The invention relates to an optical glass and an infrared transmission material, in particular to a high-performance infrared chalcogenide glass and a preparation method thereof. Background technique [0002] Chalcogenide glass refers to an amorphous material formed by introducing a certain amount of other metal or non-metal elements into the VIA group elements S, Se, and Te in the periodic table. Compared with oxide glass, chalcogenide glass has a longer infrared cut-off wavelength (> 12μm), its transmission band can cover three atmospheric windows of 1~3μm, 3~5μm and 8~12μm. It is an ideal candidate material for key optical components in infrared optical systems. Compared with traditional infrared Ge single crystal, chalcogenide glass has the following advantages: (1) The temperature coefficient of refractive index dn / dT is small, and the average dn / dT of germanium in the 3-12μm band is 400x10 -6 K -1 , And the dn / dT of a typical Se-based chalcogenide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/32C03C4/10
Inventor 杨志勇张斌杨安平任和张鸣杰
Owner XUZHOU SIMEIER OPTOELECTRONICS TECH CO LTD
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