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Preparation method of molybdenum disulfide thin film and molybdenum disulfide thin film

A molybdenum disulfide, thin film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of poor film performance, poor film material compactness, and many sulfur vacancies, etc., to improve quality, fast The effect of transferring, reducing material defects

Active Publication Date: 2015-09-30
贵溪穿越光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide a method for preparing a molybdenum disulfide thin film and a molybdenum disulfide thin film, aiming to improve the MoS obtained by the existing technology. 2 Thin film materials have relatively poor density and many sulfur vacancies, which lead to poor performance of the film and the inability to achieve rapid transfer of the film, etc.

Method used

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specific Embodiment approach

[0014] The present invention provides a method for preparing a molybdenum disulfide thin film and the molybdenum disulfide thin film. In order to make the purpose, technical solution and effect of the present invention clearer and more definite, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0015] The preparation method of a kind of molybdenum disulfide film provided by the present invention uses chemical vapor deposition (CVD) to directly grow large-area, high-quality, low-defect molybdenum sulfide (MoS) on a silicon substrate coated with an oxide buffer layer. 2 ) film, and innovatively realize MoS 2 Rapid transfer of films.

[0016] At present, the main method to prepare large-area and high-quality molybdenum sulfide films is to use chemical vapor deposition (CVD) to deposit MoS 2 The growth of thin f...

Embodiment 1

[0037] One, the silicon (Si) substrate is cleaned, and the cleaning process includes the following steps:

[0038] 1. Ultrasonic cleaning of trichlorethylene;

[0039] 2. Acetone ultrasonic cleaning;

[0040] 3. Ethanol ultrasonic cleaning;

[0041] 4. Rinse in a beaker of deionized water;

[0042] 5. Sulfuric acid: nitric acid = 1:1, cook at 80°C for a few minutes, rinse with deionized water;

[0043] 6. Hydrochloric acid: hydrogen peroxide: water = 3:1:1, shake gently for a few minutes, rinse with deionized water;

[0044] 7. Hydrofluoric acid: water = 1:20, shake gently for a few minutes, rinse with deionized water;

[0045] 8. Rinse several times in a beaker of deionized water and rinse with running water.

[0046] 2. Use pulsed laser deposition (PLD) or magnetron sputtering technology and other similar technologies to coat a ZnO buffer layer on a silicon substrate with a thickness of about 130nm:

[0047] PLD technology is an ultra-high vacuum thin film preparation te...

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Abstract

The invention discloses a preparation method of a molybdenum disulfide thin film and the molybdenum disulfide thin film. A chemical vapor deposition method (CVD) is used for directly growing a large-area high-voltage low-defect molybdenum sulfide (MoS2) thin film on a silicon substrate plated with an oxide buffer layer, and rapid transferring of the MoS2 thin film can be creatively achieved.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing a molybdenum disulfide thin film and the molybdenum disulfide thin film. Background technique [0002] Molybdenum sulfide thin films are similar to graphene in structure and performance, but unlike graphene, molybdenum sulfide thin films have a tunable band gap. bulk crystalline MoS 2 The bandgap of MoS is 1.2eV, and its electronic transition mode is indirect transition; when the thickness is a single layer, MoS 2 The band gap can reach 1.8eV, and its electronic transition mode is changed to direct transition. Therefore, MoS 2 The unique structure, excellent physical properties and adjustable energy bandgap of the thin film make it have more application potential than graphene in the field of electronic devices. It will be a two-dimensional material with very important application prospects in the fields of electricity, optics and semico...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44
CPCC23C16/30C23C16/44
Inventor 刘新科何佳铸吕有明韩舜曹培江柳文军曾玉祥贾芳朱德亮
Owner 贵溪穿越光电科技有限公司
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