Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module

A heating plate and heating block technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of prolonging the welding time, welding temperature, wasting energy, and accelerating the decomposition of flux, achieving high temperature uniformity and soldering voids The effect of low rate and large contact area

Inactive Publication Date: 2015-09-30
XIAN YONGDIAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) As the soldering temperature increases, the decomposition of the flux in the solder is accelerated, the viscosity of the solder increases, and the residue of the flux is not easy to remove, which may increase the void rate;
[0007] (2) If the welding temperature is too high, the oxidation rate of the welding parts will increase, and at the same time, it may cause damage to the chip and reduce the reliability of the module;
[0009] (4) Extending the welding time and raising the welding temperature reduces the welding efficiency and wastes energy

Method used

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  • Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module
  • Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module
  • Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module

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Embodiment Construction

[0036] As mentioned in the background art, in the existing IGBT module reflow soldering process, the heat is conducted to the bottom plate through the heating plate to realize the soldering between the bottom plate and the DBC. Due to the camber of the bottom plate, the temperature of the two DBCs at the center of the bottom plate is the highest, and the temperature of the DBCs at the four corners is slightly lower. The welding void rate of the DBCs at the four corners is significantly higher than that of the two DBCs at the center. The higher void rate seriously affects the Reliability of IGBT modules. Although prolonging the soldering time and increasing the soldering temperature may reduce the soldering void rate, there are still many problems such as low module reliability and low soldering efficiency.

[0037] Next, the specific technical solution of the present invention will be introduced in detail.

[0038] A heating plate 1, which is used in the welding of IGBT modul...

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Abstract

The invention discloses a heating plate for soldering of an IGBT (insulated gate bipolar transistor) module and a soldering method of the IGBT module. The heating plate is designed to adopt a heating column structure, during soldering, the back of a bottom plate is completely laminated with the base and/or the upper surface of the heating column of the heating plate under the effect of gravity, the heating plate can be adapted to different pre-bending shapes of bottom plates, fully lamination of the heating plate with the arc-shaped bottom plate of the IGBT module in the reflow soldering process is guaranteed, the contact area of the heating plate and the bottom plate of the IGBT module is increased, the uniformity of the temperature of the bottom plate of the IGBT module in the soldering process is guaranteed, the soldering void ratio is decreased, and the reliability of the IGBT module is improved.

Description

technical field [0001] The invention relates to the field of electronic packaging, in particular to a heating plate used for welding IGBT modules and a welding method for IGBT modules. Background technique [0002] The IGBT module (Insulated Gate Bipolar Transistor, translated into insulated gate bipolar transistor in Chinese) is a device composed of a MOSFET and a bipolar transistor. The device combines a high-power transistor (GTR) and a high-power field effect The advantage of the transistor (MOSFET) is that it is an ideal full-control device, which has the advantages of convenient control, fast switching speed, high operating frequency, and large safe working area. At present, the capacity of commercialized high-power IGBT modules has reached 750A / 6500V, which can meet the application requirements in the field of power electronics and power transmission. [0003] During the packaging process of high-power IGBT modules, due to the large difference in thermal expansion co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L21/56
Inventor 曹琳
Owner XIAN YONGDIAN ELECTRIC
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