Inverter igbt module packaging structure

Abstract

The invention discloses a packaging structure of an inverter IGBT module. Both the positive input terminal and the negative input terminal of the half-bridge IGBT module are on the lower surface of the chip, and buffer capacitors can be respectively connected to the positive and negative input terminal areas on the surface of the first insulating ceramic substrate. The surface is soldered to minimize the inductance of the IGBT module pins; the E pole of the upper half-bridge IGBT chip of the half-bridge IGBT module and the C pole of the lower half-bridge IGBT chip are both on the upper surface of the chip, which can be far away from the water cooling plate, thereby reducing the equivalent The parasitic capacitance can reduce the common mode interference current to the ground, and can improve the EMC performance of the inverter; the half-bridge IGBT modules of each phase can cancel the bonding wire, which improves the current capability and life, reduces the chip area, and reduces the cost of the inverter ; The electrical pins of the half-bridge IGBT modules of each phase are directly welded to the insulating ceramic substrate and the chip, and the positive input terminals, negative input terminals and phase output pins of the half-bridge IGBT modules of each phase are very close to each other, so that the outgoing wires of the inverter are short, The wiring is simple, and the internal cavity is not easily heated by copper bars.

Description

technical field [0001] The invention relates to a motor inverter, in particular to an inverter IGBT module packaging structure. Background technique [0002] Electric vehicles have gradually entered the automotive market due to fuel saving and environmental protection. The motor controller (inverter) is the core component of electric vehicles, which together with the motor constitute the "engine" of new energy vehicles. has a huge impact on performance. [0003] The core component in the inverter, the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module accounts for more than 40% of the cost and more than 90% of the heat generation. The quality of its packaging and mechanical heat dissipation layout have a great impact on performance of the entire inverter. [0004] Such as figure 1 As shown, each half-bridge IGBT module contains two IGBT chips, the upper and lower half-bridges, and each IGBT chip has three electrodes C, E, and G, where C and...

AI Technical Summary

Problems solved by technology

The current capability of the small bonding wire is very weak, and often when the semiconductor IGBT chip is not overheated (Tj<150 degrees), the current has been limited by the bonding wire

[0008] like Figure 4 As shown, the conventional IGBT module cooling treatment method is to flatten the flat half-bridge IGBT module with large area and small thickness on the water cooling plate. far apart

In order to facilitate customer wiring, it is usually required that the three-phase output lines of the inverter IGBT module are adjacent to each other. The phase outgoing lines of the IGBT module need to be routed and bent for a long time. rise, making the working environment of electronic components harsh

The positive and negative busbars of the three-phase half-bridge IGBT module are far apart, and three pairs of busbar capacitors are required to connect with them to ensure a small parasitic inductance. There are many connection procedures, complex production, and high failure rate.

The three-phase half-bridge IGBT module needs a large area of ​​water-cooled board to cover, and the conventional water-cooled board is thick and heavy, which limits the power density of the inverter

The water channels of the three-phase half-bridge IGBT modules are connected in series, and the first two-phase half-bridge IGBT modules are heated. When the water flows through the third-phase half-bridge IGBT modules, the water temperature has risen sharply, which reduces the current capacity.

Images