Diluent composition and use thereof

A technology of composition and diluent, which is applied to photosensitive materials, instruments, and photoengraving processes of patterned surfaces for optomechanical equipment, etc. and other problems, to achieve the effect of excellent solubility

Active Publication Date: 2020-01-17
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the chemical structure varies greatly depending on the type of photoresist, commercially available diluent compositions generally have the problem that they cannot have a fixed solvency for various photoresists
Specifically, if the dissolving power of the diluent composition for the photoresist is insufficient, in the edge bead removal process (Edge bead removal, EBR) for removing the photoresist unnecessarily attached to the substrate, or In the pre-wetting process of the diluent composition used in reducing resist consumption (Reducing resist consumption, RRC) coating, etc., defects may occur, which may lead to a decrease in yield

Method used

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  • Diluent composition and use thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0063] (Based on the evaluation of the edge ball removal performance of the photosensitive film type)

[0064] An 8-inch silicon oxide substrate was immersed in two hydrogen peroxide / sulfuric acid mixture baths for 5 minutes each, and then rinsed with ultrapure water. Next, the substrate was spin-dried in a spin drier, after which the diluent composition of Example 1 was spin-coated (about 1500 to 2500 rpm) on the substrate for reduced resist consumption (RRC) Coating pre-wetting process. Next, on the pre-wetted substrate, each photoresist described in Table 2 below was spin-coated (at about 300 rpm for about 3 seconds, and then at about 1000 to 2000 rpm for about 20 to 30 seconds) , to control to a predetermined thickness) on the substrate to form a photosensitive film with a corresponding thickness. In addition, using the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10, a test for removing edge bulbs unnecessarily attached to the edge portion of th...

experiment example 2

[0075] (Evaluation of Photoresist Coating Uniformity)

[0076] Whether or not the photosensitive film was uniformly coated on the front side of the substrate was evaluated in the following manner.

[0077] An 8-inch silicon oxide substrate was immersed in two hydrogen peroxide / sulfuric acid mixture baths for 5 minutes each, and then rinsed with ultrapure water. Next, the substrate was spin-dried in a spin dryer (spin drier), and thereafter, the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10 were spin-coated (about 1500 to 2500 rpm) on the substrate to reduce Pre-wet process for photoresist consuming (RRC) coating. At this time, each diluent composition is supplied from a pressurized container equipped with a pressure gauge (increased pressure of about 1.0 kgf), and is sprayed out through a nozzle (the flow rate of the composition is 10 to 20 cc / minute), and, The spraying time of the composition was controlled by the rotational speed of the substrate...

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Abstract

The present invention relates to a thinner composition and a use thereof. The thinner composition according to the present invention has remarkable dissolving power and suitable volatility for various types of photoresists, thereby effectively removing an unnecessarily adhered photoresist in an edge bead removal process and the like within a short time, and is applied to a pre-wetting process of a semiconductor substrate and the like, thereby enabling a photosensitive film to be formed with a small amount of photoresist.

Description

technical field [0001] The present invention relates to a diluent composition and uses thereof, more particularly to a diluent composition that can be used in each step of a photomask etching process in a semiconductor manufacturing process, and a method for forming a photosensitive film using the composition . Background technique [0002] Photolithography is a process in which a pre-designed pattern is copied to a photosensitive film on a semiconductor substrate using a photomask, and then the substrate or the underlying film is etched according to the copied pattern. [0003] In a photolithography process, a photoresist is coated on a semiconductor substrate to form a photosensitive film. In addition, the photosensitive film is exposed to light by using exposure equipment to project the pattern of the mask, and then a developing process is performed to manufacture the photosensitive film pattern of the desired shape. Next, the substrate is etched using the photosensitiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42G03F7/32H01L21/027G03F7/09
CPCG03F7/16G03F7/162G03F7/168H01L21/31133G03F7/09G03F7/32G03F7/327G03F7/42H01L21/0273
Inventor 权五焕尹锡壹郑宗铉金炳郁赵泰杓辛成健
Owner DONGJIN SEMICHEM CO LTD
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