A kind of preparation method of the nano germanium particle of surface passivation

A technology of nano-germanium and particles, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems such as hindering electron transport between particles, reducing the electrical properties of particles, and unfavorable particle applications. The effect of optimizing the preparation process and flow, reducing the number of defect states, and shortening the production cycle

Inactive Publication Date: 2017-05-17
NANKAI UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existence of long-chain ligands will hinder the transport of electrons between particles, reduce the electrical properties of particles and be difficult to remove, which is not conducive to the application of particles in subsequent devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of the nano germanium particle of surface passivation
  • A kind of preparation method of the nano germanium particle of surface passivation
  • A kind of preparation method of the nano germanium particle of surface passivation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Such as figure 1 The schematic diagram of the one-step method for synthesizing surface-passivated nano-germanium particles, the bubbler (1) and the bubbler (2) are respectively filled with liquid germanium tetrachloride and water, and placed in a constant temperature water tank (3) , the water temperature is maintained at 50°C; argon gas is passed into the bubbler (1), and the flow meter (4) is adjusted to maintain the flow rate of argon gas at 20 sccm; the hand valve (9) is opened and the opening size is adjusted so that the pressure gauge (6 ) at 200kPa; argon carries germanium tetrachloride gas molecules into the quartz glass tube (11), and adjusts the pumping speed of the mechanical pump (15) to maintain the pressure gauge (8) at 200Pa; turn on the radio frequency power supply (12), and set the power Set at 60W, the induction coil (13) generates a high-frequency electromagnetic field to ionize germanium tetrachloride to form plasma; after the glow is stabilized, arg...

Embodiment 2

[0018] Such as figure 1 The schematic diagram of the one-step method for synthesizing surface-passivated nano-germanium particles is shown. The bubbler (1) and the bubbler (2) are respectively filled with liquid germanium tetrabromide and water, and placed in a constant temperature water tank (3). , the water temperature is maintained at 70°C; argon gas is passed into the bubbler (1), and the flow meter (4) is adjusted to maintain the flow rate of argon gas at 20 sccm; the hand valve (9) is opened and the opening size is adjusted so that the pressure gauge (6 ) at 200kPa; argon carries germanium tetrabromide gas molecules into the quartz glass tube (11), and adjusts the pumping speed of the mechanical pump (15) to maintain the pressure gauge (8) at 200Pa; turn on the radio frequency power supply (12), and set the power Set at 70W, the induction coil (13) generates a high-frequency electromagnetic field to ionize germanium tetrabromide to form plasma; after the glow is stabiliz...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for synthesizing nanometer germanium particles with the passivated surfaces through one step. An inductive coupling plasma-enhanced chemical vapor deposition system is adopted in the method, liquid-state germanium and water serve as reaction sources, and the nanometer germanium particles with the passivated surfaces are synthesized through one step directly. The method has the beneficial effects that the hidden danger that the reaction sources are flammable and combustible is eliminated while the cost is reduced; gathering of the particles is avoided while the yield is improved; and the technological process is simplified through the in-situ passivation method, and the method is a nanometer germanium particle preparing method which is low in cost and is easily industrialized.

Description

technical field [0001] The invention relates to a preparation method of nano-germanium particles, in particular to a method for one-step synthesis of surface-passivated nano-germanium particles in an inductively coupled plasma enhanced chemical vapor deposition system. Background technique [0002] Nano-germanium particles have the advantages of non-toxicity, environmental friendliness, adjustable bandgap from 0.7 to 2eV, significant quantum confinement effect, high carrier mobility, and high absorption coefficient. They have very broad application prospects in the field of semiconductor technology, especially in In solar cells and photodetection devices, it can be used as an active layer to improve the performance of the device. At present, the preparation methods of nano-germanium particles mainly include solution method, laser pyrolysis, sputtering, ion implantation, etc. These preparation methods all have their own shortcomings, such as time-consuming solution method, un...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/02C23C16/44B82Y30/00B82Y40/00
Inventor 倪牮李昶张建军孙小香蔡宏琨张德贤李娟
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap