A solid-state memory based on isolated memory array structure

Abstract

The invention discloses a solid-state memory based on an isolated storage array structure. The solid-state memory comprises (M*N) upper electrodes, N lower electrodes and (M*N) storage units, wherein each upper electrode is only connected with a functional layer, and the functional layer is arranged between the upper electrode and the lower electrode; an ith upper electrode in an X direction and a jth lower electrode in a Y direction are selected according to an external control signal so as to lead the storage unit formed by the ith upper electrode, the functional layer and the jth lower electrode to work; and a direction along the upper electrodes is defined as the X direction, and a direction along the lower electrodes is defined as the Y direction. In the isolated crossbar array structure disclosed by the invention, the integration of a unit array is reduced to a certain extent, and the read-write accuracy of each storage unit in the array is improved. In the isolated crossbar array structure, during reading and writing, operation current is ensured to only pass through one storage unit after a row line selection and column line selection are determined, and thus, the problem of series-parallel crosstalk among the storage units due to the existing of a defective unit in the crossbar structure is prevented.

Description

technical field [0001] The invention belongs to the field of semiconductor memory, and more specifically relates to a solid-state memory based on an isolated memory array structure. Background technique [0002] With the rapid development of information highway and information industry, information storage technology is becoming more and more important as one of the core technologies of man-machine interface. People's demand for data storage, processing and transmission has increased dramatically in a geometric progression, which directly leads to the rapid development of information storage technology. [0003] At present, solid-state memory accounts for more than 1 / 4 of the global semiconductor industry market share and maintains a high growth rate. It can be divided into two categories: volatile memory (Volatile Memory, VM) and non-volatile memory (Non-volatile memory). - Volatile Memory, NVM). Among them, VM mainly includes dynamic random access memory (DRAM) and stati...

AI Technical Summary

Problems solved by technology

[0009] Aiming at the defects of the prior art, the object of the present invention is to provide a solid-state memory based on an isolated memory array structure, aiming to solve the problem of semiconductor memory arrays caused by poor uniformity and stability of the manufacturing process in the prior art. Hybrid crosstalk problem between middle cells

Images