Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for producing silicon carbide and silicon carbide

A manufacturing method and technology of silicon carbide, applied in the direction of silicon carbide, chemical instruments and methods, carbide, etc., to achieve the effect of high purity, low cost and low energy

Inactive Publication Date: 2015-10-28
SHIN-ETSU HANDOTAI CO LTD +1
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, these techniques require dedicated energy to manufacture SiC

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing silicon carbide and silicon carbide
  • Method for producing silicon carbide and silicon carbide
  • Method for producing silicon carbide and silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] implement figure 1 The method for producing silicon carbide of the present invention shown in . use figure 2 The CZ single crystal pulling apparatus 1 shown in , grows single crystal silicon.

[0085] In addition, a heater made of a graphite material and having an outer diameter of about 800 mm was used as the carbon material heater. In addition, on the inner side of the water-cooled main furnace chamber, a heat insulating material (insulation plate) made of carbon fiber is arranged to suppress heat loss, and the inner side of the heat insulating material is covered with a thin graphite material (inner partition plate) to Prevents deterioration of insulation materials. In addition, on the upper part of the graphite heater, an upper partition formed of the upper partition heat insulating material and the graphite material on the surface is arranged, and the upper partition is made to protrude forward from the heat insulating plate and the inner partition.

[0086] A...

Embodiment 2

[0097] The same manufacturing batch as in Example 1 was repeated. As a result, silicon carbide of the graphite heater proceeds, and the graphite portion forming the gap becomes thinner and agglomerates of silicon carbide are formed until the performance as a graphite heater cannot be satisfied.

[0098] And by peeling off the graphite heater, the silicon carbide accumulated on the graphite heater after the end of the heater life is recovered. The yellow-green silicon carbide crystals thus recovered were about 3.1 kg.

[0099] In addition, the obtained yellow-green silicon carbide was scraped off, and analyzed by X-ray diffraction and solid-state nuclear magnetic resonance (Nuclear Magnetic Resonance, NMR). As a result, the crystal system was 3C type (β type). also, image 3 Solid NMR peaks are shown. In addition, for comparison, solid state NMR was used to analyze commercially available silicon carbide powder produced by conventional methods, and the results are shown in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a method for producing silicon carbide in which, when a carbon materials heater is provided in a silicon crystal production apparatus and silicon crystals are produced from a silicon melt housed in a container heated by the carbon materials heater in a non-oxidizing atmosphere, silicon carbide is secondarily formed on the surface of the carbon materials heater and silicon carbide is produced by recovering this secondary silicon carbide. A method is thereby provided that makes it possible to produce silicon carbide at low cost and with little energy.

Description

technical field [0001] The present invention relates to a method for producing silicon carbide and silicon carbide, and more particularly to a method for producing silicon carbide and silicon carbide for various purposes such as raw materials for abrasives and calcined components, and materials for carbonizing single crystal silicon for semiconductors. Background technique [0002] Silicon carbide (SiC) is used as an abrasive due to its high hardness and excellent heat resistance and wear resistance. In addition, due to its high rigidity and high thermal conductivity, it is used as a material to replace metals in the fields of energy and aerospace. , such as bearings, mechanical seals, and components for semiconductor manufacturing equipment. Silicon carbide further has properties as a semiconductor, and its single crystal is used in power devices and the like, and is a material attracting attention. [0003] Silicon carbide powder or polycrystalline, as the starting raw ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C30B29/06
CPCC01B31/36C30B15/14C30B29/06C30B29/36C01B32/97C01B32/984
Inventor 星亮二松本克青木良隆松井智波
Owner SHIN-ETSU HANDOTAI CO LTD