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Cleaning agent used for solar grade silicon wafers and preparing method thereof

A technology for solar-grade silicon wafers and cleaning agents, which is applied in the directions of detergent compounding agents, detergent compositions, chemical instruments and methods, etc., can solve the problems of few rinsing steps, high cleaning efficiency, low cleaning foam, etc., and achieve cleaning effect. Good, simple formula, low foaming effect

Active Publication Date: 2015-11-11
SHAANXI TECHN INST OF DEFENSE IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is how to effectively remove the organic matter contamination, metal ion contamination and other particle pollution generated during the processing of solar silicon wafers, and make the cleaning foam low, less rinsing process, high cleaning efficiency, and provide a Cleaning agents for solar grade silicon wafers

Method used

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  • Cleaning agent used for solar grade silicon wafers and preparing method thereof
  • Cleaning agent used for solar grade silicon wafers and preparing method thereof
  • Cleaning agent used for solar grade silicon wafers and preparing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Cleaning agent comprises the raw material of following weight portion:

[0023]

[0024] The preparation method of the above-mentioned cleaning agent is as follows: firstly mix the pure water and the surfactant fatty alcohol polyoxyethylene ether and alkylphenol polyoxyethylene ether, and slowly add KOH in small amounts several times while stirring at a speed of 400 rpm, and continue Stir for 20 minutes, and finally add complexing agent diethylenetriaminepentaacetic acid; corrosion inhibitor triethanolamine, ethylenediamine and auxiliary agent isopropanol, stir to dissolve completely, and obtain the cleaning agent.

Embodiment 2

[0026]

[0027] The preparation method of the above-mentioned cleaning agent is as follows: firstly mix the pure water and the surfactant fatty alcohol polyoxyethylene ether and alkylphenol polyoxyethylene ether, and slowly add KOH in small amounts several times while stirring at a speed of 500 rpm, and continue Stir for 10 minutes, and finally add complexing agents diethylenetriaminepentaacetic acid and disodium ethylenediaminetetraacetate; corrosion inhibitor triethanolamine and auxiliary agents ethanol and propylene glycol, and stir to dissolve completely to obtain a cleaning agent.

Embodiment 3

[0029] Concrete formula is as follows in the present embodiment:

[0030]

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Abstract

The invention discloses a cleaning agent used for solar grade silicon wafers and a preparing method thereof. One hundred parts of the cleaning agents comprise, by weight, 2 parts to 5 parts of inorganic base, 10 parts to 20 parts of surface active agents, 1 part to 5 parts of corrosion inhibitors, 1 part to 5 parts of complex agents, 0.1 part to 0.5 part of assistants and the balance water. The preparing method of the cleaning agent includes the following steps: the water and the surface active agents are firstly mixed, the inorganic base is slowly added in a multi-time and small-amount mode under the condition that stirring is carried out at the rotating speed of 300-500 turns per minute, stirring is continuously carried out for 10-20 minutes, the complex agents, the corrosion inhibitors and the assistants are finally added and stirred to be completely dissolved, and the cleaning agent is obtained. By means of the cleaning agent used for the solar grade silicon wafers, metal ions and various organic pollutants on the surfaces of the silicon wafers can be effectively removed, damage to the silicon wafers is small, the amount of cleaning foam is small, and the cleaning efficiency is high.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, and more specifically relates to a cleaning agent for solar-grade silicon wafers and a preparation method thereof. Background technique [0002] With the rapid development and wide application of crystalline silicon solar cells, high-quality photovoltaic devices with excellent performance and good stability are increasingly favored by the market. Silicon wafers are the core components of solar cells, and their surface cleanliness, surface state and other performance parameters directly affect the power generation efficiency of solar cells. After the silicon wafer has been multi-wire cut, there are various contaminations on the surface, such as organic matter, inorganic matter, particles, metal ions, etc., and the existence forms of various contaminations on the surface of the silicon wafer are also different. Therefore, what kind of cleaning method should be used? Detergent cleaning of suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/825C11D1/72C11D3/33C11D3/30C11D3/20C11D3/04C11D3/60
Inventor 马瑾王新海
Owner SHAANXI TECHN INST OF DEFENSE IND
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