A kind of preparation method of parallel Gan-based LED chip

Abstract

A method for preparing a parallel GaN-based LED chip, comprising the following steps: 1) preparing an epitaxial wafer; vapor-depositing a layer of transparent conductive layer on the surface of the epitaxial wafer; (2) cutting the epitaxial wafer to form a single chip unit, cutting to the substrate At the bottom, isolation grooves are formed between adjacent chip units; (3) Fill isolation grooves to ensure insulation between chip units; (4) Prepare N electrodes; (5) Prepare P electrode patterns, N electrode patterns and connecting electrode patterns ; (6) Evaporate metal on the P electrode pattern, N electrode pattern and connecting electrode pattern to realize chip parallel connection; (7) Deposit SiO2 protective layer on the chip surface; (8) Cut the lobes laterally to make independent parallel LED chips . The invention can realize the advantages of convenient operation in the encapsulation process, high encapsulation efficiency, low cost, stable product performance, high luminous efficiency, etc., is suitable for mass production, and can greatly improve product reliability.

Description

technical field [0001] The purpose of the present invention is to provide a method for preparing parallel GaN-based LED chips, so as to realize the connection of multi-chips during chip production, so that downstream customers only need to wire on specific electrodes when packaging, and the chip uniformity Consistent, greatly reduces the difficulty of packaging, improves the stability of the chip after packaging, and belongs to the technical field of LED chip preparation. Background technique [0002] As the core component of semiconductor lighting, LED chips are faced with increasingly severe market conditions, and higher requirements are put forward for the manufacturing methods of LED chips in terms of how to increase the optical power of chips, improve packaging efficiency, and reduce packaging costs. Traditional high-power LED chips (such as 5W, 10W, etc.) are mostly obtained by packaging the pads of multiple LED chips in parallel in a bracket with a circuit structure i...

AI Technical Summary

Problems solved by technology

[0008] Aiming at the disadvantages of low production efficiency, poor uniformity, and inconsistent height in the packaging production and processing process of existing single LED chips, the present invention provides a parallel-connected GaN-based LED chip preparation method that is convenient for downstream customers to package, not only It can achieve high packaging efficiency, good uniformity, high stability, and can also reduce packaging costs, suitable for mass production, and greatly improve product reliability

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