AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method

A quaternary system, gallium phosphide technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of precision equipment and operator damage, achieve high practical value, reduce total reflection, and improve safety effects

Inactive Publication Date: 2015-11-18
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, strong acid is highly corrosive and volatile, which may

Method used

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  • AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method
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  • AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method

Examples

Experimental program
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Effect test

Embodiment 1

[0023] A method for roughening the gallium phosphide window layer of an AlGaInP quaternary LED is carried out in a clean room, and the steps are as follows:

[0024] 1) Wash the AlGaInP quaternary red LED epitaxial wafer with acetone, isopropanol and deionized water in sequence, and then dry it in a nitrogen environment at 70 °C for later use;

[0025] 2) Paste the blue film on the GaP window layer of the above-mentioned dried epitaxial wafer, then place it upside down on the coater, spin-coat the photoresist on the GaAs substrate surface of the epitaxial wafer, set the rotation speed to 500r / s, and repeat the spin coating three times , each interval is half an hour to form a protective film, and the photoresist and citric acid do not react chemically, which can effectively protect the electrodes on the back;

[0026] 3) After peeling off the blue film of the above-mentioned LED epitaxial wafer, perform wet etching, and the etching solution is 10mL saturated citric acid (C 6 ...

Embodiment 2

[0032] A method for roughening the gallium phosphide window layer of an AlGaInP quaternary LED. The steps are basically the same as in Example 1, except that the etching solution in step 3) is 20 mL of saturated citric acid (C 6 h 8 o 7 ) solution and 10mL of 30wt% H 2 o 2 Mixture of solutions.

[0033] The detection results of the SEM images and light intensity images of the AlGaInP quaternary LED gallium phosphide window layer before and after wet etching are similar to those in Example 1.

Embodiment 3

[0035]A method for roughening the gallium phosphide window layer of an AlGaInP quaternary LED. The steps are basically the same as in Example 1, except that the etching solution in step 3) is 30 mL of saturated citric acid (C 6 h 8 o 7 ) solution and 10mL of 30wt% H 2 o 2 Mixture of solutions.

[0036] The detection results of the SEM images and light intensity images of the AlGaInP quaternary LED gallium phosphide window layer before and after wet etching are similar to those in Example 1.

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Abstract

The invention relates to an AlGaInP quaternary-system LED gallium phoshpide window layer coarsening method. The method is carried out in a clean room. The method includes the following steps that: 1) an AlGaInP quaternary-system red-light LED epitaxial wafer is washed through acetone, isopropanol and deionized water sequentially, and the washed AlGaInP quaternary-system red-light LED epitaxial wafer is dried; 2) the GaAs substrate surface of the epitaxial wafer is spin-coated with photoresist, so that a protective film can be formed; 3); the epitaxial wafer is subjected to wet etching, and an etching solution is a mixed solution of a saturated citric acid solution and 30wt% of a H2O2 solution; 4) after etching is completed, the epitaxial wafer is arranged in a cleaning basket, and the photoresist is washed by a developer, and the epitaxial wafer is washed through acetone, isopropanol and deionized water sequentially, so that a coarsened epitaxial wafer can be obtained, and the coarsened epitaxial wafer is subjected to photoetching, so as to form a chip. According to the method of the invention, one kind of weak acid is selected to coarsen the surface of a Gap window layer through wet etching, and therefore, the total reflection of a light outgoing interface can be effectively decreased, and the outer quantum effect of an LED device can be enhanced.

Description

technical field [0001] The invention relates to the preparation of LED chips, in particular to a roughening method of AlGaInP quaternary LED gallium phosphide. Background technique [0002] In daily life, light emitting diodes (light emitting diodes, LEDs) are playing an increasingly important role. From the initial small electrical indicator lights, it has rapidly developed to the current automobile tail lights, night landscape lamps, indoor lighting, backlight sources for liquid crystal display screens, and full-color display screens. According to statistics, the highest luminous efficacy of mass-produced blue phosphor LEDs has reached 160lm / W. In 2012, the luminous efficiency of white high-power LED reached 254lm / W, making it the light source with the highest luminous efficiency. In the latest report in 2014, the laboratory light efficiency has reached a high level of 303lm / W. As a new green light source with low energy consumption, environmental protection, durability...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/22H01L33/30
CPCH01L33/0062H01L33/22H01L33/30
Inventor 印寿根张杰锋杨利营
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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