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Ferromagnetic semiconductor material Li (Cd, Mn) P and preparation method thereof

A semiconductor and ferromagnetic technology, applied in the direction of inorganic material magnetism, phosphide, etc., can solve the problems of physical damage, failure to obtain PN junction, difficulty in changing carrier types, etc., and achieve good semiconducting and easy to adjust effects

Inactive Publication Date: 2015-11-25
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This means that it will be difficult to change its carrier type, and it will not be possible to obtain a PN junction
[0005] In addition, Li(Zn,Mn)As contains toxic element As, which is likely to cause physical damage to personnel during the use and manufacture of materials

Method used

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  • Ferromagnetic semiconductor material Li (Cd, Mn) P and preparation method thereof
  • Ferromagnetic semiconductor material Li (Cd, Mn) P and preparation method thereof
  • Ferromagnetic semiconductor material Li (Cd, Mn) P and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0045] 1) In a glove box filled with inert gas, high-purity Li blocks, Cd powder, Mn powder, and P powder were mixed according to a predetermined ratio (Li 0.6 Cd 0.9 mn 0.1 P, the quality is respectively Li block 0.21 gram, Cd powder 5.06 gram, Mn powder 0.27 gram, P powder 1.55 gram) evenly mixes, and the mixture is packed in alumina ceramic test tube;

[0046] 2) Vacuum-encapsulate the ceramic test tube with the sample in the quartz tube;

[0047] 3) Put the quartz tube in a high-temperature furnace for sintering at 600°C for 20 hours, and obtain Li 0.6 Cd 0.9 mn 0.1 p.

[0048] The resistivity of the sample obtained by the method of this embodiment varies with temperature behavior as figure 2 As shown, it exhibits good semiconducting properties. The X-ray diffraction pattern of the sample is as image 3 As shown, all the diffraction peaks can find the corre...

Embodiment 2

[0050] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0051] 1) In a glove box filled with inert gas, high-purity Li blocks, Cd powder, Mn powder, and P powder were mixed according to a predetermined ratio (Li 1.4 Cd 0.6 mn 0.4 P, the quality is respectively 0.49 grams of Li block, 3.37 grams of Cd powder, 1.10 grams of Mn powder, 1.55 grams of P powder) uniformly mixed, and the mixture is packed in alumina ceramic test tube;

[0052] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, and fill a certain amount of inert gas into the quartz tube;

[0053] 3) Put the quartz tube in a high-temperature furnace for sintering at a temperature of 900°C for 5 hours, and obtain Li 1.4 Cd 0.6 mn 0.4 p.

[0054] The resistivity of the sample obtained by the method of this embodiment varies with temperature behavior as Figure 5 As shown, it exhibits good semiconducting properties. The X-ray diffraction pat...

Embodiment 3

[0056] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0057] 1) In a glove box filled with an inert gas, the high-purity Li 3 P, P, Cd, Mn, CdP, MnP according to the predetermined ratio (Li 1.2 Cd 0.95 mn 0.05 P, with mass Li respectively 3 P1.24 gram, P0.20 gram, Cd3.37 gram, Mn0.20 gram, CdP3.87 gram, MnP0.21 gram) mix evenly, put the mixture into the niobium tube, and put the niobium tube under the protection of inert gas seal;

[0058] 2) Vacuum-encapsulate the niobium tube in the quartz tube;

[0059] 3) Put the quartz tube in a high-temperature furnace and sinter it at 750°C for 15 hours. After the sintering is completed, Li 1.2 Cd 0.95 mn 0.05 p.

[0060] The resistivity of the sample obtained by the method of this embodiment varies with temperature behavior as Figure 8 As shown, it exhibits good semiconducting properties. The X-ray diffraction pattern of the sample is as Figure 9 As shown, the correspo...

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Abstract

The present invention provides a ferromagnetic semiconductor material having the formula of Liy (Cd1-xMnx) P, wherein y is greater than 0.6 and less than 1.4, and x is greater than 0 and less than 0.4. The present invention also provides a preparation method of the ferromagnetic semiconductor material, the Liy (Cd1-xMnx) P is prepared by sintering a precursor in an oxygen-isolated environment by solid phase reaction method, wherein y is greater than 0.6 and less than 1.4, x is greater than 0 and less than 0.4, and the sintering temperature is 550-950 DEG C.

Description

technical field [0001] The invention relates to a ferromagnetic semiconductor material based on group I-II-V semiconductor materials, in particular to a ferromagnetic semiconductor material with a general chemical structure formula of Li(Cd,Mn)P. Background technique [0002] Ferromagnetic dilute magnetic semiconductors are realized by doping magnetic ions into the semiconductor. Due to the application prospects of spintronic devices, ferromagnetic dilute magnetic semiconductor systems have been extensively studied as early as the 1990s (Zutic, I. et al., Rev. Mod. Phys. 76, 323, 2004). So far, the most widely studied is the dilute magnetic semiconductor based on the III-V group, that is, the semiconductor with the compound of the group III element and the V element as the parent phase (Ohno, H., Science281, 951, 1998). However, III-V dilute magnetic semiconductors also have problems such as manufacturing process and binding of carriers and magnetic moments. [0003] The r...

Claims

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Application Information

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IPC IPC(8): C01B25/08H01F1/40
Inventor 靳常青韩伟邓正
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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