Novel SiC film preparing process

Abstract

The invention discloses a novel SiC film preparing process. The novel SiC film preparing process is characterized in that the process includes the following steps that a resistance-type thermal evaporation device is adopted, silicon particles are evaporated on a graphite substrate, atoms or molecules of the silicon particles can be gasified from the surface under the vacuum condition, a silicon steam flow is formed and enters the graphite substrate with the lower temperature in an incidence manner, and a solid Si film is formed to be annealed in an annealing furnace.

Description

technical field [0001] The invention relates to a thin film preparation process, in particular to a novel SiC thin film preparation process. Background technique [0002] SiC is composed of Si atoms and C atoms, and its crystal structure is characterized by homogeneous polytypes. The most common ones in the semiconductor field are 3C-SiC with cubic sphalerite structure and 4H-SiC and 6H with hexagonal wurtzite structure. -SiC. Since the 21st century, the micro-electromechanical system (MEMS) with Si as the basic material has made great progress. With the continuous expansion of MEMS application fields, the performance limitations of the Si material itself restrict the performance of Si-based MEMS at high temperature, high frequency and high strength. Applications under extreme conditions such as radiation and chemical corrosion. Therefore, the search for new alternative materials for Si is receiving increasing attention. Among many semiconductor materials, SiC has obvious...

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Problems solved by technology

However, SiC bulk single whiskers grow at high temperature, doping is difficult to control, there are defects in the crystal, especially micropipe defects cannot be eliminated, and SiC bu

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