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Terminal structure of semiconductor element and manufacturing method thereof

A technology of terminal structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as untimely, and achieve the effect of increasing the breakdown voltage

Active Publication Date: 2018-10-16
SUPER GROUP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the current development trend of miniaturized electronic components, such a terminal structure with a large area is obviously out of date

Method used

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  • Terminal structure of semiconductor element and manufacturing method thereof
  • Terminal structure of semiconductor element and manufacturing method thereof
  • Terminal structure of semiconductor element and manufacturing method thereof

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Embodiment Construction

[0022] What the present invention proposes is a terminal structure of a semiconductor element and a manufacturing method thereof, which can be applied to, for example, trench metal oxide semi-Schottky barrier diodes (TMBS diodes), trench insulated gate bipolar transistors ( Trench IGBT) or Trench Power Metal Oxide Half Field Effect Transistor (Trench Power MOSFET) and other trench power semiconductor components. Several embodiments are listed below to illustrate the terminal structure and manufacturing method of the semiconductor device of the present invention.

[0023] Figure 1A is a cross-sectional view of a semiconductor device 100 according to an embodiment of the present invention. exist Figure 1A 1 , the semiconductor device 100 includes an active region 101 and a termination region 102 , and the termination region 102 is adjacent to the active region 101 . The termination region 102 has a termination structure, and the termination structure includes a substrate 110 ...

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Abstract

The invention provides a terminal structure of a semiconductor element, and a manufacturing method thereof. The semiconductor element includes an active zone and a terminal zone adjacent to the active zone, wherein the terminal zone has a terminal structure. The terminal structure includes a substrate, an epitaxy layer, dielectric layers, conductive material layers and a conductive layer. The epitaxy layer is disposed on the substrate, and has a voltage resistance zone. The voltage resistance zone is equipped with multiple grooves, and the grooves are parallel to each other. The dielectric layers are disposed in the grooves and on part of the epitaxy layer. The conductive material layers are disposed on the dielectric layers in the grooves. The conductive layer covers the grooves, is in contact with the conductive material layers and part of the epitaxy layer, and is in electric connection with the active zone and the terminal zone.

Description

technical field [0001] The invention relates to a terminal structure of a semiconductor element, in particular to a terminal structure with multiple grooves and a manufacturing method thereof. Background technique [0002] In power semiconductor elements, withstand voltage capability is a very important index. For example, trench field effect transistors have been widely used in power management devices as power semiconductor elements due to their high withstand voltage capability, low on-resistance, and high current characteristics. [0003] Fabrication of the above-mentioned trench field effect transistor usually requires complicated and multiple photomask processes, which will increase the process time and contamination opportunities, and limit the yield and production capacity of power semiconductor devices. [0004] On the other hand, the general trench field effect transistor has a terminal structure with a larger area to increase the breakdown voltage. However, for ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/02
Inventor 叶俊莹李元铭
Owner SUPER GROUP SEMICON
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