Method for extracting small-signal model parameters of gallium nitride high-electron-mobility transistor

A high electron mobility, small signal model technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as unfavorable algorithm applications

Active Publication Date: 2015-12-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

], this algorithm considers the problem of error accumulation, but in the parameter extraction method, the proportional coefficient of the parasitic capacitance is set as a constant, which is not conducive to the application of the algorithm in devices with different structures

Method used

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  • Method for extracting small-signal model parameters of gallium nitride high-electron-mobility transistor
  • Method for extracting small-signal model parameters of gallium nitride high-electron-mobility transistor
  • Method for extracting small-signal model parameters of gallium nitride high-electron-mobility transistor

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Embodiment

[0067] The specific steps of the method for extracting the parameters of the GaN high electron mobility transistor small-signal equivalent circuit model provided by the present invention are as follows:

[0068] Step 1. Initial value extraction of parasitic parameters:

[0069] The present invention adopts GaNHEMT20 element equivalent circuit model, as figure 1 As shown, the circuit model includes a parasitic circuit and an intrinsic circuit, and the parasitic circuit includes an outer layer parasitic capacitance C pgi 、C pdi 、C gdi 、C pga 、C pda 、C gda , the parasitic inductance L g , L d , L s , the parasitic resistance R g , R d , R s , the intrinsic circuit includes the intrinsic capacitance C gd 、C gs 、C ds , the intrinsic resistance R i , R gd , the intrinsic conductance G ds , the intrinsic current source I ds =V i G m e -jωτ by parameter G m and τ determined;

[0070] Step 1-1: Use a vector network analyzer and a probe station to perform a two-po...

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Abstract

The present invention discloses a method for extracting efficient small-signal equivalent circuit model parameters based on a gallium nitride high-electron-mobility transistor (GaN HEMT) and belongs to the field of power devices. The method, for error accumulation problems in conventional parameter extraction methods, based on a GaN HEMT 20-element small-signal model, provides an iterative algorithm, which is implemented in Matlab by programming. In an iterative process, the algorithm uses a more accurate element value than a previous element value each time for calculation, thereby leading a result to tend to an optimal solution. Compared with the conventional parameter extraction methods, the method can accurately fit S-parameters of a GaN HEMT device under full bias by running a Matlab program once, thereby obtaining all parameters of an equivalent circuit model, greatly reducing human labor in a parameter extraction process, and greatly improving the efficiency of device modeling.

Description

technical field [0001] The invention belongs to the field of power devices, in particular to a method for extracting parameters of a small-signal equivalent circuit model based on gallium nitride high electron mobility transistor (GaNHEMT). Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaNHEMT) has been widely used in microwave circuits due to its high frequency and high power characteristics. Since GaNHEMT needs to work under high temperature and high power conditions, the large-signal equivalent circuit model is the basis for microwave circuit design using GaNHEMT. In the bottom-up (bottomup) modeling method, an accurate small-signal model is the premise of establishing a large-signal model, so the small-signal model is an important link in the device modeling process. [0003] Due to the large contact resistance of GaNHEMT devices, the small-signal models of first-generation semiconductor (silicon) and second-generation semiconductor (g...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 徐跃杭闻彰汪昌思赵晓冬陈志凯徐锐敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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