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Amplification module suitable for class F or inverse class F power amplifier

A technology of power amplifier and amplifying module, applied in communication technology, microelectronics and semiconductor fields, can solve the problems of difficult design, long distance of transistors, and large space for harmonic matching network.

Active Publication Date: 2015-12-09
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, regardless of using lumped components or distributed parameter components for matching, the existing class F power amplifiers and inverse class F power amplifiers have the following disadvantages: 1. The harmonic matching network needs to occupy a large amount of space, which is not conducive to The miniaturization of the communication system; 2. The harmonic matching network is far away from the core component transistor of the power amplifier, and the loss is high, resulting in a decrease in the efficiency of the power amplifier; 3. The mutual interference between the harmonic matching network and the fundamental matching network, Difficult to design

Method used

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  • Amplification module suitable for class F or inverse class F power amplifier
  • Amplification module suitable for class F or inverse class F power amplifier
  • Amplification module suitable for class F or inverse class F power amplifier

Examples

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Embodiment 1

[0036] The embodiment of the invention discloses an amplifying module suitable for class F or inverse class F power amplifiers. The above-mentioned amplifying module includes a transistor, a resonator module, a base, a signal input terminal and a signal output terminal for realizing the harmonic matching required by an F-class or an inverse F-class power amplifier; the transistor includes a transistor input terminal, a transistor output terminal and a transistor ground end; the transistor and the resonator module are set on the base; the resonator module is set between the transistor output end and the signal output end; the resonator module includes a parallel resonator group and a series resonator group;

[0037] The parallel resonator group includes a first resonant module and a second resonant module connected in parallel between the output terminal of the transistor and the ground terminal of the transistor;

[0038] The series resonator group includes a third resonant mo...

Embodiment 2

[0046] The embodiment of the present invention discloses a specific amplifying module suitable for Class F or inverse Class F power amplifiers, such as figure 2 and image 3 shown. in figure 2 is the top view of the amplification module, image 3 is a cross-sectional view of the amplifying module.

[0047] Compared with the previous embodiment, the amplifying module in this embodiment may further include a package shell, a bonding wire 15 , a 1 / 4 wavelength microstrip line 16 and an internal matching capacitor 14 . Wherein, the packaging package includes a package base 111 , a package input terminal 112 , a package output terminal 113 and a DC bias terminal 114 . Wherein, the shell base 111 is the base of the amplification module, the shell input end 112 is the signal input end of the amplification module, and the shell output end 113 is the signal output end of the amplification module; between the shell input end 112 and the shell base 111 1. Both the output terminal ...

Embodiment 3

[0061] Another modification of the amplifying module suitable for Class F or inverse Class F power amplifiers provided by the embodiments of the present invention is that the amplifying module does not need to be packaged, and the base of the amplifying module can be directly embedded on the heat sink, and then the transistor The gate of the transistor is electrically connected to the fundamental wave input matching network, the drain of the transistor is electrically connected to the fundamental wave output matching network, and the DC bias end of the drain is directly electrically connected to the DC bias end of the circuit, by This saves the package envelope.

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Abstract

The invention discloses an amplification module suitable for a class F or inverse class F power amplifier. The amplification module is applied to the class F power amplifier or the inverse class F power amplifier. The amplification module comprises a transistor, a resonator module for realizing harmonic wave matching required by the class F or inverse class F power amplifier, a base, a signal input end and a signal output end. The resonator module comprises a parallel resonator group and a series resonator group. The parallel resonator group comprises a first resonance module and a second resonance module. The series resonator group comprises a third resonance module and a fourth resonance module. Each resonance module comprises at least one film bulk acoustic resonator. Through adoption of the amplification module, the size of the class F power amplifier or the inverse class F power amplifier is reduced, harmonic loss is lowered, the efficiency of the power amplifier is improved, mutual interference of a harmonic wave matching network and a fundamental wave matching network is reduced, and the design of the class F power amplifier or the inverse class F power amplifier is easier.

Description

technical field [0001] The invention relates to the fields of communication technology, microelectronics and semiconductor technology, in particular to an amplifying module suitable for class F or inverse class F power amplifiers. Background technique [0002] With the development of communication technology, the communication system is gradually developing towards high efficiency and miniaturization. These characteristics require that the power amplifier, which is the core component of the communication system, has the characteristics of high efficiency and miniaturization. Among them, the class F power amplifier and the inverse class F power amplifier are two crucial high-efficiency power amplifiers. [0003] In the prior art, a resonator composed of lumped elements or a stub line based on distributed parameters is usually used for matching to implement a class F power amplifier or an inverse class F power amplifier. However, regardless of using lumped components or dist...

Claims

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Application Information

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IPC IPC(8): H03F1/02H03F3/20
Inventor 杨天应张乃千
Owner DYNAX SEMICON
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