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High-temperature-application-based composite active middle layer diffusion bonding method for implementing interstitial carbide or nitride ceramic seamless connection

A technology of nitride ceramics and active intermediate layer, which is applied in the field of composite active intermediate layer diffusion connection, can solve the problem that the single-layer active metal intermediate layer cannot form a homogeneous mutual-dissolution joint, and achieve lower connection temperature, higher operating temperature, and higher efficiency Effect

Active Publication Date: 2015-12-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the single-layer active metal intermediate layer cannot form a homogeneous mutual-dissolution joint, and provides a composite active intermediate layer diffusion connection method based on high temperature application to realize the seamless connection of interstitial carbide or nitride ceramics

Method used

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  • High-temperature-application-based composite active middle layer diffusion bonding method for implementing interstitial carbide or nitride ceramic seamless connection
  • High-temperature-application-based composite active middle layer diffusion bonding method for implementing interstitial carbide or nitride ceramic seamless connection

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specific Embodiment approach 1

[0012] Specific Embodiment 1: In this embodiment, a composite active interlayer diffusion connection method based on high-temperature application to realize seamless connection of interstitial carbide or nitride ceramics is carried out according to the following steps:

[0013] 1. Surface cleaning: use two or more types of diamond grinding discs from 500# to 1500# to grind the two ceramic base materials to be connected step by step, and then use two or more types of diamond grinding discs from 1500# to 2000# Among them, two or more types of water-grinding sandpaper are finely ground step by step, and finally the two ceramic base materials to be connected after fine grinding are polished, placed in acetone, ultrasonically cleaned for 15min to 30min, and then placed in absolute ethanol. Ultrasonic cleaning for 10 to 15 minutes, and finally placed in a drying oven to dry, that is, two ceramic base materials after surface cleaning are obtained; wherein the ceramic base materials ar...

specific Embodiment approach 2

[0018] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that M in the MCx single-phase ceramic described in step 1 is Ti, Zr, Hf, V, Nb or Ta, and x is: 0.55≤x≤ 1; M in the MNx single-phase ceramics described in step 1 is Ti, Zr, Hf, V, Nb or Ta, and x is: 0.55≤x≤1; in the MNx / MNx composite phase ceramics described in step 1 M is Ti, Zr, Hf, V, Nb or Ta, and x is: 0.55≤x≤1; M in the MCx / MCx composite ceramics described in step 1 is Ti, Zr, Hf, V, Nb or Ta, x is 0.55≤x≤1; in the MNx / MCx multiphase ceramics described in step 1, M in MNx is Ti, Zr, Hf, V, Nb or Ta, x is: 0.55≤x≤1, M in MCx is Ti, Zr, Hf, V, Nb or Ta, and x is: 0.55≤x≤1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0019] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the water-abrasive paper described in step 1 is silicon carbide water-abrasive paper or alumina water-abrasive paper. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a high-temperature-application-based composite active middle layer diffusion bonding method for implementing interstitial carbide or nitride ceramic seamless connection, which aims to solve the problem that a single-layer active metal middle layer can not form a homogeneous miscible connector. The method comprises the following steps: 1. surface cleaning; 2. active metal layer presetting; and 3. vacuum diffusion bonding. When the Ti / Zr / Ti composite active metal is used as a middle layer to connect the ZrC ceramic, the connector structure only contains ZrC and TiC solid solutions under the connection conditions of 1400 DEG C / 1 hour / 20 MPa, and the shear strength of the connector is 240 MPa; and compared with the connector obtained from the single-layer active metal middle layer, the strength of the connector obtained by the method provided by the invention is enhanced by 26%. Compared with the traditional method, the strength of the connector is enhanced by nearly 2.5 times. The method is applicable to the field of braze welding.

Description

technical field [0001] The invention relates to a composite active intermediate layer diffusion connection method for realizing seamless connection of interstitial carbide or nitride ceramics based on high temperature application. Background technique [0002] Transition metal carbide or nitride ceramics MCx or MNx (TiC, ZrC, and HfC, etc. or TiN, Zr3N4, etc.) have high melting points (almost all above 3000 ° C), high hardness, low coefficient of thermal expansion, and wear and corrosion resistance Excellent performance such as good performance has been considered as the most promising ceramic material under ultra-high temperature conditions (such as supersonic aircraft, next-generation rocket engines and air-cooled fast reactors, etc.). However, these ultra-high temperature ceramic components usually need to be connected with metals or themselves in practical applications, so connection is an essential link in the manufacturing process of these ultra-high temperature cerami...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
Inventor 何鹏林铁松潘瑞
Owner HARBIN INST OF TECH
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