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Preparation method of ultra-thin gate oxide

An ultra-thin gate, ultra-thin technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of abnormal schematic diagram of missing ultra-thin gate oxygen, lack of ultra-thin gate oxygen defects, etc., to eliminate surface positive Charge, avoid missing effects

Active Publication Date: 2018-05-29
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] This reaction is particularly prominent in the more fragile regions, causing damage to SiO 2 A type of etching, which eventually leads to the complete or partial etching of the ultra-thin gate oxide in some areas, which causes the problem of missing defects in the ultra-thin gate oxide, such as figure 2 As shown, the normal ultra-thin gate oxide can be seen in the circle on the left, and the abnormal schematic diagram of the missing ultra-thin gate oxide is shown in the right figure

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  • Preparation method of ultra-thin gate oxide
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  • Preparation method of ultra-thin gate oxide

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Embodiment Construction

[0033] see image 3 , the preparation method of the ultra-thin gate oxide in this embodiment specifically includes the following steps:

[0034] Step S01, providing a silicon wafer.

[0035] The silicon wafer in this step is used to prepare ultra-thin gate oxide, and the previous steps that can be realized by using the existing technology are omitted.

[0036] Step S02, growing an ultra-thin oxide layer.

[0037] This step can be realized by using an existing process. Preferably, this embodiment adopts a high-temperature ISSG process, preferably using nitrous oxide ISSG (that is, the reaction gas is N 2 O and H 2 ), the process temperature is preferably 800-1100°C. Among them, the grown ultra-thin oxide layer is silicon dioxide. In practical applications, Rapid Thermal Oxidation (RTO) or oxidation of ISSG (reactive gases are oxygen and hydrogen) can also be used.

[0038] Step S03, baking in an environment containing nitrogen and oxygen to eliminate positive charges on t...

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Abstract

The invention discloses a preparation method of ultra-thin gate oxygen. After an ultrathin oxide layer is grown by using technologies of a high temperature ISSG and the like, a mixed gas of nitrogen and oxygen is added so as to eliminate positive charges on a surface during high temperature baking so that ultrathin oxide layer silicon dioxide can be prevented from reacting with substrate silicon so as to generate gas-state SiO and deletion and losses of the ultra-thin gate oxygen are avoided.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor integrated circuits, in particular to a method for preparing an ultra-thin gate oxide. Background technique [0002] With the continuous development of semiconductor technology, in order to meet the requirements of device performance, the thickness of the gate oxide layer of ultra-large-scale integration (ULSI) has been continuously reduced from the original 20-30nm to less than 3 nanometers, which is called ultra-thin gate oxide. . [0003] In the preparation process of ultra-thin gate oxide, a new gate dielectric growth process is commonly used from the 90nm node, that is, the ISSG in-situ steam oxidation process (In-Situ Steam Generation) is used in turn to generate a layer of ultra-thin and high-quality oxide Membrane, high temperature pure N 2 Baking eliminates positive charges on the wafer surface, DPN decoupled plasma nitriding process (Decoupled Plasma Nitriding) high...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/3105
CPCH01L21/3105
Inventor 温振平肖天金张红伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP