Resistive memory unit preparing method

Abstract

The invention provides a resistive memory unit preparing method, and relates to the technical field of non-volatile memory devices. The preparing method comprises the steps that a lower electrode layer is formed on a substrate through a conductive material; an insulating dielectric layer is deposited or spin-coated on the lower electrode layer; a trench is formed on the insulating dielectric layer through a photolithography process, and the bottom of the trench extends to the lower electrode layer; a function layer of a resistive memory unit is formed within the trench; the function layer is in an upper and lower layer laminated structure, and is formed by laminating an amorphous SnOx layer and a nitrogen oxide MnOxNy layer; the range of x in the amorphous SnOx is between 0 and 2; the range of x and the range of y in the nitrogen oxide MnOxNy are respectively between 1 and 2 and between 0.001 and 2; an upper electrode layer is formed on the function layer through a conductive material; and through a flattening process, the upper electrode layer is flush with the surface of the insulating dielectric layer. According to the resistive memory unit provided by the invention, stable multi-value memory is realized, and the memory density and stability of the memory unit can be improved.

Description

technical field [0001] The invention relates to the technical field of nonvolatile memory devices, in particular to a method for preparing a resistive variable memory unit with a high-density film structure. Background technique [0002] In recent years, with the rapid development of computer technology and Internet technology, non-volatile memory devices have played an increasingly important role in the semiconductor industry. In a nonvolatile memory device, the basic cells of the device retain data stored in the basic cells even when power is cut off. Resistive Random Access Memory (RRAM) is a new type of non-volatile memory. Its working mechanism is to trigger a reversible resistance transition effect in an external electric field, that is, under the action of an applied voltage, the resistance of the device is in a low resistance state (“0 ”) and a high-resistance state (“1”), and the resulting resistance can be maintained after the external electric field is removed. ...

AI Technical Summary

Problems solved by technology

However, since the structure of the single-layer resistive variable layer determines that there is no stable intermediate state during the reset process, it is difficult to guarantee the consistency of the multi-value storage of the single-layer resistive variable layer structure.

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