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Hybrid quantum dot light emitting diode (QLED) and fabrication method thereof

A hybrid and hybrid structure technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of limited application and short-term impact on the performance of QLED devices, achieve process controllability and improve interface stability performance, improve performance

Active Publication Date: 2015-12-23
TCL CORPORATION
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Problems solved by technology

[0003] The purpose of the present invention is to provide a hybrid QLED containing a red / green quantum dot light-emitting layer and a blue vapor-deposited organic light-emitting layer, aiming to solve the problem that the existing blue QD has a very short lifespan and affects the performance of the QLED device, which leads to its in the next generation. The problem of limited promotion and application in TV display products

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  • Hybrid quantum dot light emitting diode (QLED) and fabrication method thereof
  • Hybrid quantum dot light emitting diode (QLED) and fabrication method thereof
  • Hybrid quantum dot light emitting diode (QLED) and fabrication method thereof

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Embodiment Construction

[0016] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0017] combine Figure 2-4 , the embodiment of the present invention provides a hybrid QLED, including an anode 1, a hole injection layer 2, a hole transport layer 3, an electron transport layer 5, an electron injection layer 6 and a cathode 7, and also includes a mixed structure layer 4, so The mixed structure layer 4 includes a blue red / green quantum dot light-emitting layer 41, an evaporative material light-emitting layer 42, a mixed connection layer 43 and / or a hole transport layer 44 based on a blue evaporative material, and the hole injection layer 2, The ho...

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Abstract

The invention is applicable for the field of a light emitting diode, and provides a hybrid quantum dot light emitting diode (QLED) and a fabrication method thereof. The hybrid QLED comprises a positive electrode, a hole injection layer, a hole transmission layer, an electron injection layer, an electron transmission layer and a negative electrode and also comprises a hybrid structure layer, wherein the hybrid structure layer comprises a red / blue quantum dot light emitting layer, a blue evaporation material light emitting layer, a hybrid connection layer and / or a hole transmission layer based on a blue evaporation material, and the hole injection layer, the hole transmission layer, the hybrid structure layer, the electron transmission layer, the electron injection layer and the negative electrode are sequentially laminated on the positive electrode.

Description

technical field [0001] The invention belongs to the field of light emitting diodes, in particular to a hybrid QLED and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs), as an emerging high-efficiency electroluminescent device, have received extensive attention in recent years. Compared with conventional organic light-emitting diodes (OLEDs), QLEDs have excellent color purity, brightness, and viewing angle, making them have great application potential in next-generation TV display technologies. For the next generation of TV display devices such as TV products, there are certain standards for their lifespan. In conventional QLED (such as figure 1 As shown, 1' is the anode, 2' is the hole injection layer, 3' is the hole transport layer, 4' is the quantum dot light-emitting layer, 41' is the red quantum dot layer, 42' is the green quantum dot layer, 43' is the blue quantum dot layer, 5' is the electron transport / injection l...

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/631H10K50/115H10K71/00
Inventor 李正吉付东谢相伟
Owner TCL CORPORATION
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