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A kind of ER, YB co-doped Al2O3/AG double-layer up-conversion luminescent film and its preparation method

A technology of light-emitting film and double-layer film, applied in the fields of photoluminescence and solar cells, can solve the problems of affecting up-conversion light-emitting enhancement, etc., and achieve the effects of enhancing up-conversion light-emitting performance, good process stability and high repeatability

Inactive Publication Date: 2018-06-26
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has also been reported that noble metals are prepared on substrates by sputtering, on which up-conversion materials are deposited [11] , but this method will cause diffusion and agglomeration of noble metals during the annealing process of forming up-conversion luminescent materials, which will affect the enhancement of up-conversion luminescence

Method used

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  • A kind of ER, YB co-doped Al2O3/AG double-layer up-conversion luminescent film and its preparation method
  • A kind of ER, YB co-doped Al2O3/AG double-layer up-conversion luminescent film and its preparation method
  • A kind of ER, YB co-doped Al2O3/AG double-layer up-conversion luminescent film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Preparation of Er﹑Yb co-doped Al 2 o 3 Thin film: Among them, Er: 0.8 mol%, Yb: 10 mol%. The substrate temperature is room temperature, the oxygen partial pressure in the sputtering gas accounts for 1.8% of the total gas pressure, the sputtering pressure is 0.8Pa, and the sputtering power density is 106 kW / m 2 , the thickness of the film is 500nm, and it is annealed in air at 1000°C for 150min.

[0040] The pump source for measuring luminescence is a 980nm semiconductor laser with a power of 2W and incident on the surface of the film at an angle of 45°.

[0041] image 3 It is the upconversion luminescence spectrum of the thin film sample in Example 1 excited by the pump source.

Embodiment 2

[0043] Preparation of Er﹑Yb co-doped Al 2 o 3 / Ag double-layer film, in which, Er: 1mol%, Yb: 20mol%, Al 2 o 3 Other film preparation conditions are the same as in Example 1, and the film thickness is 500nm;

[0044] Preparation of Ag film: substrate temperature is room temperature, sputtering gas is argon, sputtering pressure is 0.6Pa, sputtering power density is 7.1kW / m 2 . Ag film thickness (a) 0 nm, (b) 14 nm.

[0045] Figure 4 is the upconversion luminescence spectrum of the thin film sample in Example 2 under the excitation of the pump source.

Embodiment 3

[0047] Preparation of Er﹑Yb co-doped Al 2 o 3 / Ag double-layer film, in which, Er: 0.5mol%, Yb: 5mol%, Al 2 o 3 Other film preparation conditions are the same as in Example 1, and the film thickness is 500nm;

[0048] Preparation of Ag film: substrate temperature is room temperature, sputtering gas is argon, sputtering pressure is 0.6Pa, sputtering power density is 5.3kW / m 2 . Ag film thickness (a) 0 nm, (b) 14 nm.

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Abstract

The invention belongs to the technical field of photoluminescence and solar cells, and particularly provides an Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and a preparation method thereof. The preparation method comprises the steps that a bilayered thin film is prepared on a quartz or silicon substrate, an Er-Yb-codoped A12O3 thin film serves as the bottom layer, deposition is performed by adopting a radio frequency sputtering technique, an A12O3 ceramic target inlaid with an Er sheets and a Yb sheet is adopted as a sputtering target, and the Er-Yb doping amount is controlled by controlling the area and sputtering power of the Er sheet and the Yb sheet at a sputtering region; a noncontinuous Ag film serves as the top layer, deposition is performed by adopting a direct-current magnetron sputtering technique, an Ag target is adopted as a target, and an Ag film with different surface appearances can be obtained by controlling the A g sputtering power and time. Compared with an Er-Yb-codoped A12O3 single-layer thin film, the prepared double-layer thin film has the obviously-enhanced upconversion luminescence performance. The preparation method is good in technological stability and high in repeatability and has the industrial production prospect.

Description

technical field [0001] The invention belongs to the technical field of photoluminescence and solar cells, in particular to rare earth doped Al 2 o 3 / Ag double-layer up-conversion luminescent film and its preparation method. Background technique [0002] Up-conversion luminescence is anti-Stokes luminescence realized by absorbing two or more photons with longer wavelengths and emitting one photon with shorter wavelengths. Rare earth ion doped up-conversion luminescent materials in optical communication, color display, data storage [1] ﹑Solid state laser [2] ﹑Solar battery [3] and other related fields have been widely used and attracted more and more attention [4][5] . At present, most of the research is Er 3+ doped system, however Er 3+ The small absorption cross-section for near-infrared photons makes it difficult to increase the intensity of upconversion luminescence, thus limiting its application in the above fields. Introducing Yb into the matrix material 3+ Fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/64C23C14/35C23C14/08C23C14/16B32B9/04B32B15/00
Inventor 沈杰任锦华王俊郑明扬
Owner FUDAN UNIV
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