Vibration element for vibration sensor under high temperature conditions and preparation method thereof
A vibration sensor and component technology, applied in instruments, measuring devices, measuring ultrasonic/sonic/infrasonic waves, etc., can solve problems such as increased difficulty, unfavorable sensor miniaturization, and a large difference in thickness between the cantilever beam and the vibrating mass block, etc. To achieve the effect of improving accuracy and sensitivity
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[0032] The present invention provides a method for preparing a vibrating element of a vibration sensor under high temperature conditions. The method specifically includes the following steps:
[0033] 1) Select a high-temperature-resistant wafer with a thickness of 20 μm to 2000 μm for oxygen cleaning;
[0034] 2) Carry out a metal sputtering process to the wafer after cleaning, and sputter a layer of metal chromium and gold successively;
[0035] 3) Apply photoresist to the wafer after sputtering metal, and use photolithography and wet etching process to complete the patterning process;
[0036] 4) Carry out electroplating metal nickel process to patterned wafer, form the mask of metal nickel;
[0037] 5) Perform an ion etching process on the wafer after electroplating metal nickel. The etching area is the gap between the vibrating element support 1, the double cantilever folding beam 2 and the vibrating mass 3, and the etching depth should be greater than the double cantile...
Embodiment 1
[0044] for figure 1The design scheme of the silicon carbide sensor vibrating element for measuring vibration data under high temperature conditions shown above uses double cantilever beams to form a triangular connection between the vibrating element support 1 and the vibrating mass 3. The finite element simulation analysis of this scheme is carried out by ANSYS software , to get the analysis result. The width of the cantilever beam in this structural scheme is 150 μm, the length is 2000 μm, the thickness is 30 μm, and the angle between the two cantilever beams is 90 degrees; the diameter of the vibrating mass 3 is 750 μm, and the thickness is 130 μm. The analysis shows that the first-order natural frequency of this scheme is 4040.6 Hz, and the sensitivity is 20.104nm / g. It can be seen that the length of the cantilever beam in this structural solution is relatively long and the area of the vibrating mass 3 is relatively small, thus wasting a large space, and the size of the...
Embodiment 2
[0046] for figure 2 , image 3 The design scheme of the silicon carbide sensor vibrating element for measuring vibration data under high temperature conditions shown above uses a double cantilever folded beam 2 to connect the vibrating element bracket 1 and the vibrating mass 3. The finite element simulation analysis of this scheme is carried out by ANSYS software , to get the analysis result. The width of the double cantilever folded beam 2 in this structural scheme is 150 μm, the length of the first section is 2200 μm, the second section is 2600 μm, and the thickness is 60 μm; the side length of the vibration mass 3 is 2000 μm, and the thickness is 80 μm. The analysis shows that the first-order natural frequency of this scheme is 3059.5 Hz, and the sensitivity is 28.787nm / g. It can be seen that the double cantilever folded beam 2 of this structural scheme is long and the area of the vibrating mass 3 is relatively large. The use of the folded beam saves a lot of space, a...
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