Method for enhancing response rate of semiconductor quantum well infrared photo detector through electrical pulse modulation
A quantum well and detector technology, applied in the field of enhancing the responsivity of semiconductor quantum well infrared photodetectors, can solve the problems of light intensity, low detector efficiency, low efficiency, etc.
Inactive Publication Date: 2016-02-03
FUDAN UNIV
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However, due to the weak light intensity in this band, the light wave absorption of the semiconductor quantum well structure is limited by the widely recognized "polarization selection law" in this field, and other factors, the detector efficiency in this band is still low, and the actual The efficiency of the device has been improved by combining oblique angle incidence (such as document 2) and etching groove structure (such as document 3), but the efficiency is still low (absorption rate 7-10%, such as document 1)
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[0022] Below in conjunction with accompanying drawing and embodiment, further describe the present invention.
[0023] figure 1 It is an illustration of the electric pulse application method involved in the present invention. In the figure, there are two layers of quantum wells 103 and 102, the two layers of quantum wells are turned on by the channel 104 and the working state of the device is reset by applying a pulse to the reset gate 105. There is a metal coupling grating layer 106 about 100 nm above the upper quantum well 103 , and the coupling grating itself has a structure to couple photons vertically incident on the device surface to be absorbed by the ground state electrons in the upper quantum well 103 . The optical response is improved by adjusting the energy band structure of the upper quantum well 103 by applying a sawtooth pulse 108 matching the reset pulse 107 on the coupling grating.
[0024] Specifically, a positive pulse 107 and a sawtooth wave pulse 108 wit...
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The invention belongs to the technical field of light wave detection, and specifically relates to a method for enhancing the response rate of a semiconductor quantum well infrared light detector through electrical control. The detector consists of two layers of quantum well material, wherein one layer of thinner quantum well near the surface is provided with two energy levels and is a light absorption area, and the other layer of thicker quantum well is located below and detects light by sensing the charge change of the light absorption area. The energy band structure in the interlayer of the two layers of quantum well forms a potential energy gradient layer through doping of particles of different concentrations, and the potential energy slowly decrease from the upper layer to the lower layer. The device is reset by applying pulse to a reset grating. The energy band change of the upper layer of quantum well is regulated dynamically by applying a pulse wave matching a reset pulse to a coupling grating, so as to enhance the light response rate of the detector.
Description
technical field [0001] The invention belongs to the technical field of light wave detection, and in particular relates to a method for enhancing the responsivity of a semiconductor quantum well infrared light detector. Background technique [0002] The use of quantum well structure devices for light detection is one of the main technologies for light detection in the mid- and far-infrared bands. However, due to the weak light intensity in this band, the light wave absorption of the semiconductor quantum well structure is limited by the widely recognized "polarization selection law" in this field, and other factors, the detector efficiency in this band is still low, and the actual The efficiency of the device has been improved by combining oblique angle incidence (such as document 2) and etching groove structure (such as document 3), but the efficiency is still low (absorption rate is 7-10%, such as document 1). In order to overcome this difficulty, the present invention ado...
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IPC IPC(8): H01L31/18H01L31/0352H01L31/101
CPCH01L31/035236H01L31/101H01L31/18Y02P70/50
Inventor 安正华徐洁
Owner FUDAN UNIV