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Display panel

A technology for display panels and substrates, applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as failure to operate normally

Inactive Publication Date: 2016-02-17
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Accordingly, the present invention utilizes the first metal oxide layer to absorb short-wavelength light (such as irradiating ultraviolet light or blue light during the process, or ultraviolet light or blue light from the external environment), effectively reducing the short-wavelength light contacting the thin film transistor unit. Semiconductor layer, thereby reducing the electrical offset of the thin film transistor unit, and improving the light leakage phenomenon of the display device when operating in the dark state, or the problems such as the shift register, the data multiplexer and other driving circuits cannot operate normally. Therefore, the present invention The display panel can provide more stable and higher quality display effect

Method used

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Embodiment 1

[0016] Please refer to figure 1 , the display panel of the present invention includes: a substrate 1; a thin film transistor unit is arranged on the substrate 1, and the thin film transistor unit includes: a gate electrode 21, a semiconductor layer 22 and an insulating layer 26, wherein the The semiconductor layer 22 includes a carrier channel region 221, and the gate electrode 21 is arranged corresponding to the carrier channel region 221; a first metal oxide layer 32 is arranged on the semiconductor layer 22 and covers the carrier channel region 221 ; and a silicon oxide (SiO x ) or aluminum oxide (Al 2 o 3 ), the isolation layer 31 is disposed between the semiconductor layer 22 and the first metal oxide layer 32, wherein light with a wavelength range between 210nm and 350nm passes through the first metal oxide layer 32 The transmittance is 50% or less.

[0017] In this embodiment, the thin film transistor unit may further include a source electrode 23 and a drain electr...

Embodiment 2

[0026] Please refer to figure 2 , The display panel of another preferred embodiment of the present invention includes: a substrate 1; a thin film transistor unit is arranged on the substrate 1, and the thin film transistor unit includes: a gate electrode 21, a semiconductor layer 22, a Source electrode 23, a drain electrode 24 and an insulating layer 26, wherein the semiconductor layer 22 includes a carrier channel region 221, the carrier channel region 221 is between the source electrode 23 and the drain electrode 24 between, and the gate electrode 21 is set corresponding to the carrier channel region 221; a first metal oxide layer 32 is set on the semiconductor layer 22 and covers the side wall 222 of the semiconductor layer 22, and covers the source pole electrode 23 and the drain electrode 24; and a silicon oxide (SiO x ) or aluminum oxide (Al 2 o 3 ), the isolation layer 31 is disposed between the semiconductor layer 22 and the first metal oxide layer 32, wherein ligh...

Embodiment 3

[0031] Please refer to image 3 , The display panel of another preferred embodiment of the present invention includes: a substrate 1; a thin film transistor unit is arranged on the substrate 1, and the thin film transistor unit includes: a gate electrode 21, a semiconductor layer 22, a insulating layer 26 and a buffer layer 27, wherein the semiconductor layer 22 includes a carrier channel region 221, and the gate electrode 21 is arranged above the semiconductor layer 22 and corresponding to the carrier channel region 221; a first metal An oxide layer 32 is disposed on the semiconductor layer 22 and at least covers the carrier channel region 221; and a silicon oxide (SiO x ) or aluminum oxide (Al 2 o 3 ), the isolation layer 31 is disposed between the semiconductor layer 22 and the first metal oxide layer 32, wherein light with a wavelength range between 210nm and 350nm passes through the first metal oxide layer 32 The transmittance is 50% or less.

[0032] In addition, the...

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Abstract

The invention relates to a display panel, which comprises a substrate, a thin-film transistor cell, a first metal oxide layer and an isolating layer, wherein the thin-film transistor cell is arranged on the substrate and comprises a gate electrode and a semiconductor layer; the semiconductor layer comprises a carrier channel region; the gate electrode is arranged corresponding to the carrier channel region; the first metal oxide layer is arranged on the semiconductor layer and at least covers the carrier channel region; and the isolating layer contains silicon oxide or aluminum oxide and is arranged between the semiconductor layer and the first metal oxide layer, wherein the penetration rate of a ray, of which the wavelength is 210nm to 350nm, penetrating through the first metal oxide layer is less than 50%.

Description

technical field [0001] The invention relates to a display panel, in particular to a display panel which improves the operation stability of thin film transistor units. Background technique [0002] With the continuous advancement of display technology, users have higher and higher requirements for electronic products. All devices are developing towards small size, thin thickness, and light weight. Therefore, the current mainstream display devices on the market have changed from the previous cathode ray tube. Developed into a liquid crystal display device (LCD) or an organic light emitting diode device (OLED). [0003] In LCD or OLED, since the energy gap of the active layer material of the thin film transistor unit (TFT) is generally similar to ultraviolet light (UV) and blue light, TFT is very sensitive to ultraviolet light and blue light, and under the irradiation of ultraviolet light or blue light ( For example, when ultraviolet light or blue light is irradiated in the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L27/32H01L27/02
Inventor 沈义和庄耿介
Owner INNOLUX CORP
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