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Solid-state terahertz radiator based on edge sound effect

An edge sound, terahertz technology, applied in the field of radiators in the terahertz frequency band, can solve problems such as lack of compactness, and achieve the effects of easy process, high operating frequency and simple structure

Inactive Publication Date: 2018-06-19
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

To excite such terahertz waves requires corresponding radiation sources, and the progress of terahertz technology has been hindered mainly by the lack of compact, low-power, solid-state terahertz radiation sources.

Method used

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  • Solid-state terahertz radiator based on edge sound effect
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  • Solid-state terahertz radiator based on edge sound effect

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Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. The schematic implementation and description of the present invention are used to explain the present invention, but are not intended to limit the present invention.

[0030] Please also see figure 1 and figure 2 ,in, figure 1 It is a schematic diagram of the surface of the solid-state terahertz radiator described in this embodiment, figure 2 It is a schematic diagram of the longitudinal structure of the solid-state terahertz radiator described in this embodiment. The solid-state terahertz radiator based on the edge sound effect described in this embodiment, from the bottom to the top, sequentially includes an insulating substrate layer 1, a two-dimensional semiconductor conductive layer 2 arranged on the surface of the insulating substrate layer, and a set The insulating protection layer 3 on the surface of the two-dimensional ...

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Abstract

The invention discloses a solid-state terahertz radiator based on the edge sound effect, which comprises an insulating substrate layer, a semiconductor conductive layer arranged on the surface of the insulating substrate layer, an insulating protective layer arranged on the surface of the semiconductor conductive layer, and a penetrating semiconductor conductive layer. Insulated slots, input electrodes and output electrodes. The insulating groove includes a first insulating groove, a second insulating groove and a third insulating groove; the first insulating groove and the second insulating groove are arranged oppositely, and the gap between them forms a low Conductive channel; one end of the third insulating groove is a sharp edge structure, and the sharp edge is facing the opening of the low conductive channel away from the input electrode; the other end of the third insulating groove extends to the semiconductor conductive One edge of the layer; one end of the first insulating groove and one end of the second insulating groove extend to the two sides of the semiconductor conductive layer. The radiator has a simple structure, is easy to integrate, and can work in the terahertz frequency band at room temperature.

Description

technical field [0001] The invention relates to a solid-state terahertz radiator based on the edge tone effect, in particular to a solid-state terahertz radiator that utilizes the edge tone effect (edge ​​tone effect) to cause instability to excite high-frequency radiation, and can work in the terahertz at room temperature. Radiators in the Hertz band. Background technique [0002] Terahertz (1THz=10 12 Hz) radiation, usually refers to electromagnetic waves with a frequency from 100GHz to 10THz, and its corresponding wavelength ranges from 3mm to 30μm, which is between microwave and infrared waves. Recently, due to the advancement of nanotechnology, terahertz research has been applied in more fields , terahertz technology is widely used in communication technology, biological spectroscopy, remote detection of dangerous goods, food quality control, and manipulation of quantum states in semiconductors due to its non-destructive detection properties. To excite such terahertz ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 王卓念许坤远陈溢杭
Owner SOUTH CHINA NORMAL UNIVERSITY