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A kind of perovskite solar cell and preparation method thereof

A solar cell and perovskite-type technology, applied in the field of dye-sensitized solar cells, can solve problems such as corrosion of perovskite, environmental pollution, electron traps, etc., and achieve the effect of reducing surface hydroxyl groups, low price, and reducing surface states

Active Publication Date: 2017-10-03
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] At present, the porous carrier layer can be divided into two types, one is the photoanode without electron transport function, such as Al 2 o 3 , this type of carrier material needs to be matched with chlorine-doped perovskite with good electron transport ability because it cannot transmit electrons, but the light absorption characteristics of chlorine-doped perovskite are not as good as perovskite with full iodine; Transport function of TiO 2 Nanoporous support layer, but this type of support layer TiO 2 There are many problems at the interface with perovskite: TiO 2 There are surface defects that will form electron traps, and the hydroxyl groups on its surface will corrode the perovskite, and TiO 2 It has a certain photocatalytic effect
[0009] Currently in TiO 2 and perovskite interfaces are modified with Sb 2 S 3 and Y 2 o 3 Two, but there are some problems with these two methods: Sb 2 S 3 Toxic and pollute the environment; Y 2 o 3 A preparation temperature of 500 degrees Celsius is required, and Y 2 o 3 The cost is relatively high

Method used

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  • A kind of perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1, preparation Al 2 o 3 Modified all-solid-state sensitized solar cells

[0049] 1) Preparation of photoanode

[0050] TiO 2 dense film and TiO 2 Preparation of porous film layer:

[0051] The TiO 2 The dense layer was prepared according to the method provided by the following documents: Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell withEfficiency Exceeding9%, H.S.Kim, C.R.Lee, J.H.Im, K.B.Lee, T.Moehl, A.Marchioro, S.J. Moon, R. Humphry-Baker, J.H. Yum, J.E. Moser, M. Gratzel and N.G. Park, Scientific Reports, 2012, 2, 591.

[0052] The TiO 2 The porous film layer was prepared according to the method provided in the following documents: Sequential deposition as a route to high-performance perovskite-sensitized solar cells, J.Burschka, N.Pellet, S.Moon, R.H.Baker, P.Gao, M.K.Nazeeruddin, M. Graetze, Nature 2013, 499, 316.

[0053] The specific steps are:

[0054] a Prepare a dense titanium dioxide film b...

Embodiment 2

[0065] Embodiment 2, prepare the all-solid-state sensitized solar cell of MgO modification

[0066] The preparation method is basically the same as in Example 1, except that the preparation of the interface modification material layer: MgO precursor Mg(CH 3 COO) 2 4H 2 Configuration of O solution: 0.48702g of Mg(CH 3 COO) 2 4H 2 O was dispersed in 50 mL deionized water, and the Mg(CH 3 COO) 2 The concentration is 45mmol / L. Mg(CH 3 COO) 2 4H 2 O solution was added dropwise on the TiO 2 On the porous membrane, 4000rpm homogenized the glue for 30s, and sintered at 380°C for 30 minutes; the thickness of the prepared MgO interface modification material layer was 8nm.

Embodiment 3

[0067] Embodiment 3, preparation Cs 2 CO 3 Modified all-solid-state sensitized solar cells

[0068] The preparation method is basically the same as in Example 1, except that the preparation of the interface modification material layer: Cs 2 CO 3 Solution configuration: 0.4884g Cs 2 CO 3 The particles were dispersed in 50mL ethanol, and the Cs in the solution 2 CO 3 The concentration is 30mmol / L, and then the solution is filtered with a 22nm pore size filter to obtain Cs 2 CO 3 solution. Will Cs 2 CO 3 The solution was added dropwise on the obtained TiO 2 On the porous membrane, homogenize the glue at 4000rpm for 30s, and sinter at 300°C for 30min; the prepared Cs 2 CO 3 The thickness of the interface modifying material layer is 10 nm.

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Abstract

The invention provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises in sequence from bottom to top: a photoanode formed by a TiO2 compact film and a TiO2 porous film, an interface modification material layer arranged on the TiO2 porous film of the photoanode, a perovskite dye sensitized layer, a cavity transmission layer and a counter electrode. The interface modification material layer is selected from one of the following objects: MgO, Al2O3 and Cs2CO3. A modification agent is prepared on the TiO2 porous film after the TiO2 porous film is prepared and before the perovskite dye sensitized layer is prepared. In this way, the electronic transmission capability of TiO2 is utilized, interfaces of TiO2 and perovskite are modified, the surface state is reduced, surface hydroxy is reduced, photocatalysis of TiO2 acting on perovskite is minimized, and the stability of the perovskite solar cell is improved. Moreover, interface recombination can be effectively minimized.

Description

technical field [0001] The invention belongs to the field of dye-sensitized solar cells, and in particular relates to a perovskite type solar cell and a preparation method thereof. Background technique [0002] With the extensive use of fossil energy such as oil, coal, and natural gas, the emission of greenhouse gases and fuel waste gas has caused environmental problems such as the greenhouse effect and acid rain, which have posed a serious threat to human survival. The reserves of the three major fossil energy sources of oil, natural gas and coal have a very limited period for human use. Therefore, people pay more and more attention to the research and development of environmentally friendly renewable energy technologies, and solar energy is the green renewable energy with the largest amount of resources and the most widely distributed. [0003] Photovoltaic power generation is the most important way to utilize solar energy. In 1954, Bell Labs developed the first silicon-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/44H01L51/48
CPCY02E10/549Y02P70/50
Inventor 王立铎郭旭东董豪鹏李闻哲吴骅黄昌华
Owner TSINGHUA UNIV