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Step-by-step deposition method of semi-insulating polysilicon based on igbt and igbt terminal structure

A technology of semi-insulating polysilicon and terminal structure, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of unstable withstand voltage performance of IGBT devices.

Active Publication Date: 2018-06-08
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides an IGBT-based method for step-by-step deposition of semi-insulating polysilicon and an IGBT terminal structure to solve the defect in the prior art that when impact ionization occurs on the surface of an IGBT device, the distribution of the electric field will be changed and the withstand voltage performance of the IGBT device will be unstable.

Method used

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  • Step-by-step deposition method of semi-insulating polysilicon based on igbt and igbt terminal structure
  • Step-by-step deposition method of semi-insulating polysilicon based on igbt and igbt terminal structure
  • Step-by-step deposition method of semi-insulating polysilicon based on igbt and igbt terminal structure

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Embodiment 1

[0024] figure 1 It is a schematic flow chart of Embodiment 1 of the step-by-step deposition semi-insulating polysilicon method based on IGBT provided by the present invention, as figure 1 As shown, the present invention provides a step-by-step method for depositing semi-insulating polysilicon based on IGBTs, including:

[0025] Step 101, depositing a first semi-insulating polysilicon film layer on the top of the substrate of the first conductivity type, wherein a body of the second conductivity type opposite to the first conductivity type is provided at the top end of the substrate, and the first semi-insulation The polysilicon thin film layer is deposited at a first temperature.

[0026] Specifically, the first conductivity type is N-type or P-type, which is not limited here. In this embodiment, the first conductivity type is N-type as an example for illustration. A first semi-insulating polysilicon thin film layer is deposited on the top of the N-type substrate, and a body...

Embodiment 2

[0041] The IGBT terminal structure is obtained by IGBT-based step-by-step deposition of semi-insulating polysilicon.

[0042] image 3 It is a structural schematic diagram of Embodiment 2 of the IGBT terminal structure provided according to the present invention, such as image 3 As shown, the IGBT terminal structure provided by the present invention includes: a second conductivity type body 2 disposed at one end of a first conductivity type substrate 1 and located in the substrate 1 opposite to the first conductivity type, deposited at a first temperature The first semi-insulating polysilicon film layer 3 on the outer surface of the end where the second conductivity type body 2 of the substrate 1 is located, and deposit the second semi-insulating polysilicon film layer on the first semi-insulating polysilicon film layer 3 at a second temperature 4, wherein the first temperature is greater than the second temperature.

[0043] In the IGBT terminal structure provided by the p...

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Abstract

The present invention provides a method for fractionally depositing semi-insulating polycrystalline silicon based on an IGBT and an IGBT terminal structure. The method comprises a step of depositing a first semi-insulating polycrystalline silicon film layer at the top of a first conductivity type substrate and depositing the first semi-insulating polycrystalline silicon film layer in a first temperature, and a step of depositing a second semi-insulating polycrystalline silicon film layer on the first semi-insulating polycrystalline silicon film layer and depositing a second semi-insulating polycrystalline silicon film layer in a second temperature, wherein the first temperature is larger than the second temperature. According to the method, firstly the first semi-insulating polycrystalline silicon film layer is formed in the first temperature, then the second semi-insulating polycrystalline silicon film layer is formed in the second temperature which is lower than the first temperature, thus the crystal grains in the second semi-insulating polycrystalline silicon film layer are smaller than the crystal grains in the first semi-insulating polycrystalline silicon film layer, thus the specific resistance is raised, the leakage current of an IGBT device is reduced, thus the voltage withstand performance of the IGBT device is stable, and the reliability is enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a step-by-step deposition semi-insulating polysilicon method based on IGBT (Insulted Gate Bipolar Transistor, insulated gate bipolar transistor) and an IGBT terminal structure. Background technique [0002] IGBT is a vertical conductive power device, and its withstand voltage performance is determined by the internal breakdown voltage and surface breakdown voltage. Due to the influence of the curvature of the PN junction on the surface, the maximum electric field on the surface is greater than the maximum electric field in the body, so the withstand voltage performance of the device is often determined by the surface breakdown voltage, and when the impact ionization occurs on the surface, the heat generated by the ionization process Carriers easily enter the protective film on the surface, where they form fixed charges and change the surface electric field distribut...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L21/02H01L29/739
CPCH01L21/02532H01L29/66325H01L29/7393
Inventor 马亮周飞宇肖海波刘根
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD