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Method for carrying out metal bonding on LED lighting emitting component

A technology for metal bonding and light-emitting components, applied in electrical components, electrical solid-state devices, semiconductor devices, etc., can solve the problems of high cost, yield loss, complex process, etc., achieve high bonding yield, reduce costs, and reduce bonding Effect of Metal Layer Thickness

Inactive Publication Date: 2016-03-09
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the metal bonding technology in the existing LED bonding layer, metal bonding methods are usually divided into two types, one is eutectic bonding, that is, different metal materials are deposited on two substrates, such as: Au / Sn, Au / In, Au / Ge, Cu / Sn, Al / Ge... materials, after heating to a temperature greater than the eutectic temperature, the two substrates are bonded and pressed to complete the metal bonding. The disadvantage of this method is that the metal thickness needs to be > 1um. The cost is relatively high; the other is metal diffusion bonding, which deposits the same metal material on two substrates, such as: Au / Au, Cu / Cu...etc., and uses high temperature and high pressure to mix the metal interface to achieve metal bonding. Manufacturing process, among them, the metal diffusion bonding pays special attention to the surface flatness. At present, the general manufacturing process is through the flattening process to achieve the surface smoothing effect. The disadvantage of this method is that the manufacturing process is complicated, resulting in yield loss.

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  • Method for carrying out metal bonding on LED lighting emitting component
  • Method for carrying out metal bonding on LED lighting emitting component
  • Method for carrying out metal bonding on LED lighting emitting component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Experiments show that the flatter the bonding layer metal is, the more fully the metal atoms are mixed and diffused during the bonding process, and the bonding surfaces are tightly connected. The rougher the bonding layer metal is, the bonding surface cannot be tightly connected due to fine holes in some areas during the bonding process; To achieve a good bonding effect, a flat bonding surface is required.

[0023] Such as figure 1 As shown, for an LED light-emitting component, it includes a GaAs substrate 1 and an epitaxial layer arranged on the back of the substrate. The epitaxial layer includes an N-type cladding layer 2, a light-emitting layer 3, and a P-type cladding layer 4 in order from top to bottom; The mirror system 5 below the epitaxial layer, the first metal bonding layer 6 , the second metal bonding layer 7 and the Si substrate 8 are arranged in sequence below the mirror system 5 .

[0024] The method for metal bonding of the LED light-emitting component i...

experiment example 1

[0027] Select the vacuum degree of starting plating as 3E-06torr; the evaporation thickness is At the evaporation temperature of 50-70°C, the influence of different evaporation rates on the surface roughness RMS and bonding yield was investigated. The results are as follows: Figure 4 and figure 2 shown.

[0028] according to figure 2 As shown in the curve, as the evaporation rate increases, the RMS value of the surface roughness decreases, and the corresponding bonding yield is higher.

experiment example 2

[0030] Choose the evaporation rate as The evaporation thickness is At the evaporation temperature of 50-70°C, the effects of different starting vacuum degrees on the surface roughness RMS and bonding yield were investigated. The results are as follows: Figure 5 and figure 2 shown.

[0031] according to image 3 As shown in the curve, the RMS value of the surface roughness decreases with the decrease of the starting vacuum plating. When the starting vacuum degree is 3-5E-06torr, the surface roughness RMS reaches the best, and the corresponding bonding yield is higher.

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Abstract

The present invention provides a method for carrying out metal bonding on an LED lighting emitting component. The LED lighting emitting component comprises a first substrate, a first metal bonding layer, a second metal bonding layer and a second substrate. The method comprises the steps of (1) evaporating a first metal bonding layer on the first substrate, (2) evaporating a second metal bonding layer on the second substrate, and (3) carrying out high temperature and high pressure bonding on the first metal bonding layer and the second metal bonding layer, wherein the evaporating rate of the evaporating process is 3 to 30 A / S, the evaporating vacuum degree is 3E-06 to 8E-06 torr, the evaporating temperature is 50 to 70 DEG C, and the evaporating thickness is 5 to 20 kA. According to the method, by using the optimization of an evaporating condition, the metal diffusion bonding process is simplified, a high bonding yield can be achieved, the thickness of a bonding metal layer can be effectively reduced, and the cost is reduced.

Description

technical field [0001] The invention relates to a method for performing metal bonding on an LED light-emitting component and an LED light-emitting component prepared therefrom. Background technique [0002] The LED (light-emitting diode, Light-emitting diode) industry is one of the most watched industries in recent years. Up to now, LED products have energy saving, power saving, high efficiency, fast response time, long life cycle time, and mercury-free , has the advantages of environmental protection benefits, so it is considered to be the best light source for the new generation of green energy-saving lighting. [0003] In the metal bonding technology in the existing LED bonding layer, metal bonding methods are usually divided into two types, one is eutectic bonding, that is, different metal materials are deposited on two substrates, such as: Au / Sn, Au / In, Au / Ge, Cu / Sn, Al / Ge... materials, after heating to a temperature greater than the eutectic temperature, the two subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/62H01L21/603
CPCH01L24/03H01L33/48H01L33/62H01L2224/033H01L2933/0033H01L2933/0066
Inventor 吴超瑜吴俊毅谢振刚王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS