A silicon heterojunction solar cell, its annealing method and its preparation method

Abstract

The invention discloses a silicon heterojunction solar cell, an annealing method and a preparation method thereof. The annealing method includes: using a first temperature to heat the silicon wafer for a first duration; wherein, the first temperature is 120°C to 150°C; the first duration is 5min to 30min; and using a second temperature to heat the silicon wafer Heat treatment for a second duration; wherein, the second temperature is 260° C. to 350° C.; the second duration is 5s to 30s. The high-temperature rapid annealing method can prolong the low-temperature curing time to fully volatilize the organic solvent in the silver paste, and the higher heating temperature can effectively reduce the defect state density at the interface of the crystalline silicon / amorphous silicon film, and TCO / amorphous silicon The interfacial resistance of the thin film and TCO / Ag electrode, and the duration of the higher heating temperature is only 5s to 30s, which will not lead to an increase in the density of defect states in the amorphous silicon thin film, and maximize the conversion efficiency of silicon heterojunction solar cells .

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a silicon heterojunction solar cell, an annealing method and a preparation method thereof. Background technique [0002] With the continuous improvement of the strategic position of energy in the national economy and the continuous development of solar energy utilization technology, photovoltaic power generation systems have received extensive attention, and low cost and high efficiency are the direction of its future development. A photovoltaic power generation system includes photovoltaic power generation components and a photovoltaic system balance component (Balance of System, BOS). At present, solar cells in photovoltaic power generation modules are mainly crystalline silicon cells. The technologies to achieve high conversion efficiency of crystalline silicon cells mainly include: selective emitter technology, back contact high-efficiency technology, metal perforation winding tech...

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Problems solved by technology

[0006] The purpose of the embodiment of the present invention is to provide a silicon heterojunction solar cell, its annealing method and its preparation method, which are used to solve the problem that the existing annealing method is difficult to improve the interface properties of the silicon heterojunction solar cell and the properties of the amorphous silicon thin film. The quality and the resistance value of the silver grid line are all optimal, which cannot maximize the conversion efficiency of silicon heterojunction solar cells

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