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Photomask blank

一种光掩模、遮光膜的技术，应用在光学、用于光机械处理的原件、仪器等方向

Inactive Publication Date: 2016-03-23
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to establish a finer photolithography technology, despite a thinner film, the light-shielding film is formed of a material capable of shielding ArF excimer laser light from a silicon compound and a transition metal, and a chromium-based material film is used as a hard mask for processing the light-shielding film film, whereby higher precision processing becomes possible

Method used

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  • Photomask blank

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A chromium-based material film (44 nm thick) composed of CrN was deposited on the substrate by using a DC sputtering system. with Ar:N 2 = Flow ratio of 1:1 (molar ratio) Argon and nitrogen were used as sputtering gas, controlled so that the gas pressure in the sputtering chamber could be 0.04Pa. Using a Cr target, deposition was performed while rotating the substrate at 30 rpm.

[0046] For the chromium-based material film thus obtained, the transmittance of ArF excimer laser light (193 nm) was measured by using a phase shift / transmittance measurement system MPM193 (Lasertec Corp.) to determine the optical density per unit film thickness. The optical density per unit film thickness is shown in Table 1 below.

[0047] In addition, the chromium-based material film obtained above was heat-treated at 150° C. for 10 minutes. Using the warp amount of the transparent substrate before depositing the chromium-based material film thereon as a reference, the warp amount of the...

Embodiment 2

[0049] A chromium-based material film (45 nm thick) composed of CrN was deposited on the substrate by using a DC sputtering system. with Ar:N 2 = Flow ratio of 1:1.5 (molar ratio) Argon and nitrogen were used as sputtering gas, controlled so that the gas pressure in the sputtering chamber could be 0.05Pa. Using a Cr target, deposition was performed while rotating the substrate at 30 rpm. For the chromium-based material film thus obtained, the optical density and warpage amount per unit film thickness were determined in the same manner as in Example 1. Put the results in Table 1.

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Abstract

A photomask blank includes a chromium-based material film as a light-shielding film, wherein the chromium-based material film has an optical density per unit thickness at a wavelength of 193 nm of at least 0.050 / nm, and the chromium-based material film has a tensile stress or compressive stress corresponding to an amount of warp of up to 50 nm. The present invention provides a photomask blank having a thin film of chromium-based material which is lowered in film stress while retaining a high optical density per unit film thickness. This enables high-accuracy patterning of a chromium-based material film.

Description

technical field [0001] The present invention relates to a photomask blank as a raw material for a photomask used in microfabrication of semiconductor integrated circuits, charge-coupled devices (CCD), liquid crystal display (LCD) color filters, magnetic heads, and the like. Background technique [0002] In recent semiconductor processing technologies, the trend toward higher integration of large-scale integrated circuits creates increasing demands for miniaturization of circuit patterns, among others. Demands for further reduction in size of wiring patterns constituting circuits and miniaturization of contact hole patterns for constituting interlayer connections of cells are increasing. Therefore, in the manufacture of a photomask with a circuit pattern used in photolithography for forming such a wiring pattern and a contact hole pattern, a technology capable of accurately writing a finer circuit pattern is also required to meet miniaturization. need. [0003] In order to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/50G03F1/26
CPCG03F1/50G03F1/20H01L21/0275H01L21/0337
Inventor 深谷创一稻月判臣
Owner SHIN ETSU CHEM CO LTD
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